TitleKauffman patent notebook (#509)
AuthorKauffman, Willard L.
Biographical NotesWillard L. Kauffman joined Fairchild circa 1966 where, as head of the Transistors and Diodes section of the Device Development Department headed by J. Kabell, he worked on the application of planar processing techniques to fabricate to high voltage (>400 volts) power transistors and silicon controlled rectifiers (SCR). He joined Intel circa 1969 where he served as manufacturing manager and later as vice president and director of components quality and reliability under Craig Barrett at the time of the Japanese penetration of the U.S. memory market. He later served as COO of disk media company Komag, San Jose, California, prior to its acquisition by Western Digital in the late 1990s.
ExtentApproximately 31 dated entries over 82 pages.
Dimensions12 x 10 inches
DescriptionDescribes wafer processing and device structures for building high voltage and high current carrying capacity SCR devices. Includes design proposal and test results for a TRIAC and bidirectional trigger product. Record of the gettering experiment of TR163, below (p. 66).
Collection TitleFairchild Semiconductor notebooks and technical papers
PublicationsThe author contributed to the following R&D Technical Reports (TR) and papers in professional publications during his service at Fairchild:
TR163 An experimental study of nickel and phosphorus gettering (1968-10-09).
Kauffman, W.L. and Bergh, A.A. The temperature dependence of ideal gain in double diffused silicon transistors. IEEE Transactions on Electron Devices, vol. 15, iss. 10 (1968): 732-735.
Kauffman, W. and Albus, H.-P. The biplanar thyristor: A method for combining reliability and low costs. 1968 International Electron Devices Meeting, vol. 14 (1968):110-112.
Klein, Thomas, Kauffman, Willard L., Hurlston, Robert E., Jones, Brian L. and Frohman, Dov. Manufacturing methods for integrated circuits using MOS transistors. The Defense Technical Information Center (1969-01): Accession number: AD0850892.