People
Short biographies of people included on the "Timeline" pages are listed alphabetically below. Please advise the webmaster of any errors or updates via the "Feedback" link at the bottom of the page. Additional biographies are in preparation.
Adcock, Willis (November 25, 1922 - Dec 16, 2003)
Willis Alfred Adcock was born in Canada. He immigrated to the United States in 1936 and became an American citizen in 1944. Dr. Adcock was an inventor, physicist, electrical engineer, and educator. Adcock graduated from Brown University with a degree in physical chemistry in 1948. He was recruited by Gordon Teal to work on silicon transistors at Texas Instruments in 1953 and was involved with TI’s development of the portable transistor radio for Regency Radio, their supply of transistors to IBM and to the military for the Atlas and Minuteman missiles. Adcock hired Jack Kilby to work on miniaturized circuits and Jay Lathrop who developed photolithography techniques. He retired from TI at age 65 and served as a professor ofelectrical and computer engineering at the University of Texas until 1993.
Willis Alfred Adcock was born in Canada. He immigrated to the United States in 1936 and became an American citizen in 1944. Dr. Adcock was an inventor, physicist, electrical engineer, and educator. Adcock graduated from Brown University with a degree in physical chemistry in 1948. He was recruited by Gordon Teal to work on silicon transistors at Texas Instruments in 1953 and was involved with TI’s development of the portable transistor radio for Regency Radio, their supply of transistors to IBM and to the military for the Atlas and Minuteman missiles. Adcock hired Jack Kilby to work on miniaturized circuits and Jay Lathrop who developed photolithography techniques. He retired from TI at age 65 and served as a professor ofelectrical and computer engineering at the University of Texas until 1993.
Andrus, Jules
From 1955 to 1957, Andrus worked with Walter L. Bond at Bell Labs on applying the photoengraving techniques used in making printed circuits to adapt photolithography to silicon processing. In this approach, photoactive chemicals called “photoresists” deposited on the silicon-dioxide surface layer are used in a photographic process to define precision openings in the layer through which impurities are diffused into the underlying silicon, thus establishing the required electrical properties there. Andrus was awarded a patent on this technique in 1964.
From 1955 to 1957, Andrus worked with Walter L. Bond at Bell Labs on applying the photoengraving techniques used in making printed circuits to adapt photolithography to silicon processing. In this approach, photoactive chemicals called “photoresists” deposited on the silicon-dioxide surface layer are used in a photographic process to define precision openings in the layer through which impurities are diffused into the underlying silicon, thus establishing the required electrical properties there. Andrus was awarded a patent on this technique in 1964.
Atalla, Martin M. (“John”)
Born in Port Said, Egypt, Atalla earned master’s and doctor’s degrees in mechanical engineering at Purdue University, the latter in 1949, before beginning work at Bell Labs. There he did pioneering research on the silicon-dioxide layer, which serves as a protective coating on semiconductor silicon. This research led to the development in 1960 of the metal-oxide-semiconductor (or MOS) transistor with Dawon Kahng. The MOS transistor has since become the central active component of semiconductor memories and microprocessors; millions of them can be found on every microchip made today. After leaving Bell Labs, Atalla co-founded Hewlett-Packard Associates to provide the Hewlett-Packard Corporation with solid-state capabilities. In 1973 he founded his own company, the Atalla Corporation, to address the security requirements of banking and financial institutions.
Born in Port Said, Egypt, Atalla earned master’s and doctor’s degrees in mechanical engineering at Purdue University, the latter in 1949, before beginning work at Bell Labs. There he did pioneering research on the silicon-dioxide layer, which serves as a protective coating on semiconductor silicon. This research led to the development in 1960 of the metal-oxide-semiconductor (or MOS) transistor with Dawon Kahng. The MOS transistor has since become the central active component of semiconductor memories and microprocessors; millions of them can be found on every microchip made today. After leaving Bell Labs, Atalla co-founded Hewlett-Packard Associates to provide the Hewlett-Packard Corporation with solid-state capabilities. In 1973 he founded his own company, the Atalla Corporation, to address the security requirements of banking and financial institutions.
Baker, Orville
Orville Baker earned a BS in engineering physics in 1956 and joined IBM Federal Systems in Owego NY where he met Bob Noyce and Tom Bay of Fairchild on their mission to sell core driver transistors. In 1959 he moved to Fairchild R & D in Palo Alto, CA. Two years later he left to join the founders of Signetics as employee number 5. Baker adapted a discrete diode-transistor logic circuit he had worked on at IBM to a monolithic IC configuration that was introduced as the SE 100 series. He rose to the position of vice-president for technology and was a board member from 1965 to 1970 when he founded Signetics Memory Systems, later renamed Scientific Microsystems. He later worked for National Semiconductor on the COPS microcontroller products and joined Western Digital as vice president where he designed a Pascal microprocessor engine.
Orville Baker earned a BS in engineering physics in 1956 and joined IBM Federal Systems in Owego NY where he met Bob Noyce and Tom Bay of Fairchild on their mission to sell core driver transistors. In 1959 he moved to Fairchild R & D in Palo Alto, CA. Two years later he left to join the founders of Signetics as employee number 5. Baker adapted a discrete diode-transistor logic circuit he had worked on at IBM to a monolithic IC configuration that was introduced as the SE 100 series. He rose to the position of vice-president for technology and was a board member from 1965 to 1970 when he founded Signetics Memory Systems, later renamed Scientific Microsystems. He later worked for National Semiconductor on the COPS microcontroller products and joined Western Digital as vice president where he designed a Pascal microprocessor engine.
Balletto, Jack
Jack Balletto received a master’s degree in electrical engineering from the University of Santa Clara in 1967. He worked at Lockheed in electronic countermeasures and joined Fairchild Semiconductor in an MOS marketing role 1969. With two associates from Fairchild, Balletto co-founded Synertek, an MOS supplier to video game and PC vendors that was acquired by Honeywell in 1978. Mr. Balletto was a founder and the first CEO of VLSI Technology, Inc. He later worked in Hambrecht & Quist's (H&Q) venture capital group before forming the Sunrise Capital funds in 1996.
Jack Balletto received a master’s degree in electrical engineering from the University of Santa Clara in 1967. He worked at Lockheed in electronic countermeasures and joined Fairchild Semiconductor in an MOS marketing role 1969. With two associates from Fairchild, Balletto co-founded Synertek, an MOS supplier to video game and PC vendors that was acquired by Honeywell in 1978. Mr. Balletto was a founder and the first CEO of VLSI Technology, Inc. He later worked in Hambrecht & Quist's (H&Q) venture capital group before forming the Sunrise Capital funds in 1996.
Bardeen, John (May 23, 1908 – January 30, 1991)
Born in Madison, WI, Bardeen is the only person to have won two Nobel Prizes in physics: in 1956, for the invention of the transistor at Bell Telephone Laboratories (shared with Walter Brattain and William Shockley); and in 1972, for a developing a fundamental theory of superconductivity (shared with Leon Cooper and J. Robert Schrieffer). Raised in Madison, Bardeen received two degrees in electrical engineering at the University of Wisconsin before attending Princeton University, where he earned his Ph.D. in physics in 1936. He taught physics at the University of Minnesota until 1941, leaving to work in naval ordnance during World War II. In 1945 he joined a new Bell Labs solid-state physics group led by Shockley. The following year he and Brattain invented the point-contact transistor. In 1951 Bardeen accepted a joint position as professor of electrical engineering and physics at the University of Illinois, Urbana. Intrigued by superconductivity since 1950, he began working seriously on a theory of this phenomenon with Cooper and Schrieffer in 1955. They published the successful “BCS theory” of superconductivity two years later. He spent the last four decades of his life at the University of Illinois in Urbana, IL, where he died in 1991.
Born in Madison, WI, Bardeen is the only person to have won two Nobel Prizes in physics: in 1956, for the invention of the transistor at Bell Telephone Laboratories (shared with Walter Brattain and William Shockley); and in 1972, for a developing a fundamental theory of superconductivity (shared with Leon Cooper and J. Robert Schrieffer). Raised in Madison, Bardeen received two degrees in electrical engineering at the University of Wisconsin before attending Princeton University, where he earned his Ph.D. in physics in 1936. He taught physics at the University of Minnesota until 1941, leaving to work in naval ordnance during World War II. In 1945 he joined a new Bell Labs solid-state physics group led by Shockley. The following year he and Brattain invented the point-contact transistor. In 1951 Bardeen accepted a joint position as professor of electrical engineering and physics at the University of Illinois, Urbana. Intrigued by superconductivity since 1950, he began working seriously on a theory of this phenomenon with Cooper and Schrieffer in 1955. They published the successful “BCS theory” of superconductivity two years later. He spent the last four decades of his life at the University of Illinois in Urbana, IL, where he died in 1991.
Beckman, Arnold O. (April 10, 1900 - May 18, 2004)
Born in Cullom, Illinois, Beckman received degrees in chemistry and chemical engineering from the University of Illinois before earning his doctorate in chemistry from California Institute of Technology in 1928. While a professor at Caltech, he developed a pH meter and spectrophotometer; he founded Beckman Instruments, Inc., in 1935 to make and sell these and other scientific instruments. Together with William Shockley in 1956, he founded the Shockley Semiconductor Laboratory in Mountain View, CA, as a division of Beckman Instruments. Beckman eventually invested over a million dollars of his company’s capital in this venture, which never managed to realize a profit. After its best scientists and engineers departed en masse in 1957 to found the Fairchild Semiconductor Corporation, he gradually became disenchanted with Shockley and sold the struggling firm in 1960. For his scientific and business contributions, Beckman was awarded the National Medal of Science in 1989. In later years he turned to philanthropy, establishing the Arnold and Mabel Beckman Foundation to support education and research.
Born in Cullom, Illinois, Beckman received degrees in chemistry and chemical engineering from the University of Illinois before earning his doctorate in chemistry from California Institute of Technology in 1928. While a professor at Caltech, he developed a pH meter and spectrophotometer; he founded Beckman Instruments, Inc., in 1935 to make and sell these and other scientific instruments. Together with William Shockley in 1956, he founded the Shockley Semiconductor Laboratory in Mountain View, CA, as a division of Beckman Instruments. Beckman eventually invested over a million dollars of his company’s capital in this venture, which never managed to realize a profit. After its best scientists and engineers departed en masse in 1957 to found the Fairchild Semiconductor Corporation, he gradually became disenchanted with Shockley and sold the struggling firm in 1960. For his scientific and business contributions, Beckman was awarded the National Medal of Science in 1989. In later years he turned to philanthropy, establishing the Arnold and Mabel Beckman Foundation to support education and research.
Birkner, John
John Birkner earned an MSEE from the University of Akron, OH in 1971 and worked for Goodyear Aerospace, Philco Ford, and Computer Automation before joining Monolithic Memories, Inc. in 1975. Together with H.T. Chua, he adapted the company’s PROM technology to develop a form of programmable logic under the trade name PAL and created a simple PC-based assembler program (PALASM) design tool for users. With Chua and product engineer Andy Chan he founded Peer Research, later renamed QuickLogic Corporation, in 1988.
John Birkner earned an MSEE from the University of Akron, OH in 1971 and worked for Goodyear Aerospace, Philco Ford, and Computer Automation before joining Monolithic Memories, Inc. in 1975. Together with H.T. Chua, he adapted the company’s PROM technology to develop a form of programmable logic under the trade name PAL and created a simple PC-based assembler program (PALASM) design tool for users. With Chua and product engineer Andy Chan he founded Peer Research, later renamed QuickLogic Corporation, in 1988.
Blank, Julius
Julius Blank earned a BS in mechanical engineering from City College, New York in 1950. He joined Western Electric, Kearny, NY in 1952 to work as a machinist where he met toolmaker Eugene Kleiner. Blank and Kleiner were hired in 1956 by William Shockley to build transistor production capabilities at Shockley Semiconductor Laboratories in Mountain View, CA. He left with seven others to found Fairchild Semiconductor in 1957 where he designed and built facilities. The last founder to depart, Blank left Fairchild in 1969 and consulted for several years before helping to start Xicor in 1978.
Julius Blank earned a BS in mechanical engineering from City College, New York in 1950. He joined Western Electric, Kearny, NY in 1952 to work as a machinist where he met toolmaker Eugene Kleiner. Blank and Kleiner were hired in 1956 by William Shockley to build transistor production capabilities at Shockley Semiconductor Laboratories in Mountain View, CA. He left with seven others to found Fairchild Semiconductor in 1957 where he designed and built facilities. The last founder to depart, Blank left Fairchild in 1969 and consulted for several years before helping to start Xicor in 1978.
Bond, William L.
From 1955 to 1957, Bond worked with Jules Andrus at Bell Labs on applying the photoengraving techniques used in making printed circuits to do photolithography in silicon processing. In this approach, photoactive chemicals called “photoresists” deposited on the silicon-dioxide surface layer are used in a photographic process to define precision openings in the layer through which impurities are diffused into the underlying silicon, thus establishing the required electrical properties there.
From 1955 to 1957, Bond worked with Jules Andrus at Bell Labs on applying the photoengraving techniques used in making printed circuits to do photolithography in silicon processing. In this approach, photoactive chemicals called “photoresists” deposited on the silicon-dioxide surface layer are used in a photographic process to define precision openings in the layer through which impurities are diffused into the underlying silicon, thus establishing the required electrical properties there.
Boone, Gary W.
Gary W. Boone was co-developer with Michael J. Cochran of the TMS1802 calculator chip in 1971, and, per a 1996 Texas Instruments press release, the inventor of the single-chip microcontroller. This was issued after the U. S. Patent and Trademark Office reversed a 1990 patent issued to Gilbert P. Hyatt. Mr. Boone moved to Litronix, Inc., of Cupertino CA in the early 1970s to work on calculator chip designs. In 1998 he commented the "most minimal processor I know of was made at Litronix circa 1976, for use in digital watches. As I recall, this processor could only count, not even add. The architect was Steve McCrystal.”
Gary W. Boone was co-developer with Michael J. Cochran of the TMS1802 calculator chip in 1971, and, per a 1996 Texas Instruments press release, the inventor of the single-chip microcontroller. This was issued after the U. S. Patent and Trademark Office reversed a 1990 patent issued to Gilbert P. Hyatt. Mr. Boone moved to Litronix, Inc., of Cupertino CA in the early 1970s to work on calculator chip designs. In 1998 he commented the "most minimal processor I know of was made at Litronix circa 1976, for use in digital watches. As I recall, this processor could only count, not even add. The architect was Steve McCrystal.”
Bose, Jagdish Chandra (November 30, 1858 - November 23, 1937)
Jagdish Chandra Bose was born in Mymensingh (now in Bangladesh). He moved to England in 1880 where he earned a degree in Natural Science from Christ's College, Cambridge. On his return he lectured at Presidency College, Calcutta where, after 1894, he devoted himself to research in refraction, diffraction, polarization, and wireless telegraphy, with emphasis on the study of coherers (devices that detect radio waves). He also founded the Bose Institute at Calcutta, devoted mainly to the study of plants.
Jagdish Chandra Bose was born in Mymensingh (now in Bangladesh). He moved to England in 1880 where he earned a degree in Natural Science from Christ's College, Cambridge. On his return he lectured at Presidency College, Calcutta where, after 1894, he devoted himself to research in refraction, diffraction, polarization, and wireless telegraphy, with emphasis on the study of coherers (devices that detect radio waves). He also founded the Bose Institute at Calcutta, devoted mainly to the study of plants.
Boysel, Lee
Lee Boysel earned an MSEE from the University of Michigan in 1963. He worked at IBM, McDonnell Aerospace Corporation, and Fairchild Semiconductor where he built some of the industry’s highest density MOS LSI memory and CPU devices using a four-phase clocking scheme. He founded and served as president, CEO, and chairman of Four-Phase Systems, Inc. in 1969 to exploit the technology to produce low-cost distributed processing computer systems using in-house designed custom devices. Motorola purchased Four-Phase in 1982.
Lee Boysel earned an MSEE from the University of Michigan in 1963. He worked at IBM, McDonnell Aerospace Corporation, and Fairchild Semiconductor where he built some of the industry’s highest density MOS LSI memory and CPU devices using a four-phase clocking scheme. He founded and served as president, CEO, and chairman of Four-Phase Systems, Inc. in 1969 to exploit the technology to produce low-cost distributed processing computer systems using in-house designed custom devices. Motorola purchased Four-Phase in 1982.
Brattain, Walter Houser (February 10, 1902 – October 13, 1987)
Born in Amoy, China, to American parents, Brattain served as a physicist at Bell Telephone Laboratories from 1929 until 1967. After that he returned to teach at his alma mater Whitman College in Walla Walla, WA, where he died in 1987. Raised in Washington state, Brattain earned his M.S. degree in physics at the University of Oregon after attending Whitman and his Ph.D. at the University of Minnesota in 1928. At Bell Labs he worked first with Joseph Becker on the physics of copper-oxide rectifiers. After working on anti-submarine warfare during World War II, he returned to Bell Labs and in 1945 joined a solid-state physics group headed by William Shockley. In 1947 he invented the first transistor, called the point-contact transistor, with John Bardeen; they were awarded a patent on this breakthrough invention in 1952. Bardeen, Brattain and Shockley then shared the 1956 Nobel Prize in physics for the invention of the transistor.
Born in Amoy, China, to American parents, Brattain served as a physicist at Bell Telephone Laboratories from 1929 until 1967. After that he returned to teach at his alma mater Whitman College in Walla Walla, WA, where he died in 1987. Raised in Washington state, Brattain earned his M.S. degree in physics at the University of Oregon after attending Whitman and his Ph.D. at the University of Minnesota in 1928. At Bell Labs he worked first with Joseph Becker on the physics of copper-oxide rectifiers. After working on anti-submarine warfare during World War II, he returned to Bell Labs and in 1945 joined a solid-state physics group headed by William Shockley. In 1947 he invented the first transistor, called the point-contact transistor, with John Bardeen; they were awarded a patent on this breakthrough invention in 1952. Bardeen, Brattain and Shockley then shared the 1956 Nobel Prize in physics for the invention of the transistor.
Braun, Karl Ferdinand (June 6, 1850 - April 20, 1918)
Ferdinand Braun never used his first name or first initial, the use of Karl is a recent affectation of historians. He studied at the Universities of Marburg and Berlin and graduated in 1872. He worked as an assistant at Würzburg University and in 1874 accepted a teaching appointment in Leipzig. Two years later he was appointed Extraordinary Professor of Theoretical Physics at the University of Marburg and in 1880 filled a similar post at Strasbourg University. Braun was made Professor of Physics at the Technische Hochschule in Karlsruhe in 1883 and joined the University of Tübingen in 1885. Ten years later he returned to Strasbourg as Principal of the Physics Institute. Braun’s discovery of the point-contact diode and invention of what is called Braun's electrometer in Germany (a cathode-ray oscillograph) is overshadowed by his work on wireless telegraphy for which he shared the Nobel Prize in Physics with Guglielmo Marconi in 1909.
Ferdinand Braun never used his first name or first initial, the use of Karl is a recent affectation of historians. He studied at the Universities of Marburg and Berlin and graduated in 1872. He worked as an assistant at Würzburg University and in 1874 accepted a teaching appointment in Leipzig. Two years later he was appointed Extraordinary Professor of Theoretical Physics at the University of Marburg and in 1880 filled a similar post at Strasbourg University. Braun was made Professor of Physics at the Technische Hochschule in Karlsruhe in 1883 and joined the University of Tübingen in 1885. Ten years later he returned to Strasbourg as Principal of the Physics Institute. Braun’s discovery of the point-contact diode and invention of what is called Braun's electrometer in Germany (a cathode-ray oscillograph) is overshadowed by his work on wireless telegraphy for which he shared the Nobel Prize in Physics with Guglielmo Marconi in 1909.
Brokaw, Paul
Paul Brokaw earned a BS in Physics from Oklahoma State University. He worked for Wells Surveys Inc, Arthur D. Little Inc., and Communication Technology Inc. In 1971 he joined Nova Devices, which became the semiconductor division of Analog Devices. As an Analog Fellow he designed a variety of products and holds upward of 100 U.S patents in areas including monolithic A/D and D/A converters, sensors, voltage references, amplifiers, power management circuits, and ASICs. He was selected in 1993 as "Innovator of the Year" by the readers of EDN magazine and elected to the Electronic Design Magazine "Hall of Fame" in 2002.
Paul Brokaw earned a BS in Physics from Oklahoma State University. He worked for Wells Surveys Inc, Arthur D. Little Inc., and Communication Technology Inc. In 1971 he joined Nova Devices, which became the semiconductor division of Analog Devices. As an Analog Fellow he designed a variety of products and holds upward of 100 U.S patents in areas including monolithic A/D and D/A converters, sensors, voltage references, amplifiers, power management circuits, and ASICs. He was selected in 1993 as "Innovator of the Year" by the readers of EDN magazine and elected to the Electronic Design Magazine "Hall of Fame" in 2002.
Buehler, Ernest
Buehler served as a technician under Gordon Teal at Bell Telephone Laboratories, where he implemented many of Teal’s ideas on growing single crystals of silicon and germanium. Working with Teal and Morgan Sparks, Buehler grew and doped the germanium crystals from which the first truly successful junction transistors were fabricated in 1951. After Teal left for Texas Instruments, Inc., in 1952, Buehler remained with Bell Labs, working for other chemists including Henry Theurer.
Buehler served as a technician under Gordon Teal at Bell Telephone Laboratories, where he implemented many of Teal’s ideas on growing single crystals of silicon and germanium. Working with Teal and Morgan Sparks, Buehler grew and doped the germanium crystals from which the first truly successful junction transistors were fabricated in 1951. After Teal left for Texas Instruments, Inc., in 1952, Buehler remained with Bell Labs, working for other chemists including Henry Theurer.
Buie, James L. (1920 – 1988)
James (Jim) Buie earned a BSEE from the University of Southern California (USC) in 1949. In 1954 he joined Pacific Semiconductors, Inc. where he worked on high-speed discrete transistor switching circuits. In 1961 he designed a monolithic circuit with a multi-emitter input structure that he called transistor-coupled-transistor logic (TCTL), later known transistor transistor logic (TTL). Buie’s prior art prevailed in a patent interference proceeding with Thomas Longo’s work on TTL at Sylvania. Buie remained with the company as a senior scientist after it was acquired by the TRW Components Group in 1962 where contributed to processing innovations in dielectric isolation and triple-diffused bipolar devices and their applications to LSI multipliers and data conversion devices. He retired in 1971 and continued to work as a consultant until 1983.
James (Jim) Buie earned a BSEE from the University of Southern California (USC) in 1949. In 1954 he joined Pacific Semiconductors, Inc. where he worked on high-speed discrete transistor switching circuits. In 1961 he designed a monolithic circuit with a multi-emitter input structure that he called transistor-coupled-transistor logic (TCTL), later known transistor transistor logic (TTL). Buie’s prior art prevailed in a patent interference proceeding with Thomas Longo’s work on TTL at Sylvania. Buie remained with the company as a senior scientist after it was acquired by the TRW Components Group in 1962 where contributed to processing innovations in dielectric isolation and triple-diffused bipolar devices and their applications to LSI multipliers and data conversion devices. He retired in 1971 and continued to work as a consultant until 1983.
Camenzind, Hans
Hans Camenzind earned a BSEE in Switzerland, joined Standard Telephone in Zurich as a junior engineer and on moving to the US earned an MSEE from Northeastern University Boston, MA. Following work at Transitron and Tyco Semiconductor (acquired by P. R. Mallory) he joined Signetics in 1968. He founded semicustom IC design house Interdesign, Inc. in 1970 that he sold to Ferranti (later GEC Plessey) in 1977 when he became responsible for the development of linear ICs at Array Design Inc. Designer of more than 100 standard, custom, and semicustom linear circuits, including the popular 555 timer for Signetics, and holder of 20 patents on linear ICs, Camenzind has written numerous articles and several books on circuit and system design.
Hans Camenzind earned a BSEE in Switzerland, joined Standard Telephone in Zurich as a junior engineer and on moving to the US earned an MSEE from Northeastern University Boston, MA. Following work at Transitron and Tyco Semiconductor (acquired by P. R. Mallory) he joined Signetics in 1968. He founded semicustom IC design house Interdesign, Inc. in 1970 that he sold to Ferranti (later GEC Plessey) in 1977 when he became responsible for the development of linear ICs at Array Design Inc. Designer of more than 100 standard, custom, and semicustom linear circuits, including the popular 555 timer for Signetics, and holder of 20 patents on linear ICs, Camenzind has written numerous articles and several books on circuit and system design.
Cavlan, Napoleone
As manager of the Advanced Products applications engineering group at Signetics in the mid-1970s, Napoleone Cavlan was an enthusiastic evangelist for the concept of user programmable logic ICs based on the FPLA architecture. He worked with design engineer Ron Cline on the definition of the 82S100 and other devices in Signetics IFL (Integrated Fuse Logic) Family. He later worked for MMI and after that company’s merger with AMD in 1987 he joined National Semiconductor as a marketing manager.
As manager of the Advanced Products applications engineering group at Signetics in the mid-1970s, Napoleone Cavlan was an enthusiastic evangelist for the concept of user programmable logic ICs based on the FPLA architecture. He worked with design engineer Ron Cline on the definition of the 82S100 and other devices in Signetics IFL (Integrated Fuse Logic) Family. He later worked for MMI and after that company’s merger with AMD in 1987 he joined National Semiconductor as a marketing manager.
Chan, Andy
Andrew (Andy) K. Chan earned a BSEE in Electrical Engineering from Washington State University and an MSEC in Electrical Sciences from the University of New York, Stonybrook. A design engineering manager at Monolithic Memories Inc, he worked with John Birkner and H.T. Chua in 1977 to develop the PAL family of devices and together with whom he co-founded Peer Research (renamed QuickLogic in 1991) in 1988. As Vice President, Research and Development of QuickLogic he led the development of families of high-speed FPGAs based on an anti-fuse technology.
Andrew (Andy) K. Chan earned a BSEE in Electrical Engineering from Washington State University and an MSEC in Electrical Sciences from the University of New York, Stonybrook. A design engineering manager at Monolithic Memories Inc, he worked with John Birkner and H.T. Chua in 1977 to develop the PAL family of devices and together with whom he co-founded Peer Research (renamed QuickLogic in 1991) in 1988. As Vice President, Research and Development of QuickLogic he led the development of families of high-speed FPGAs based on an anti-fuse technology.
Chapin, Daryl
Chapin worked as an electrical engineer at Bell Telephone Laboratories during the 1950s. He is best known as one of the three inventors of the silicon photovoltaic cell, or solar cell, with chemist Calvin Fuller and physicist Gerald Pearson. Fuller had developed diffusion techniques to impregnate silicon wafers with a thin layer of boron impurities, establishing a p-n junction just beneath the silicon surface that served to convert sunlight into electrical energy. Chapin was responsible for the electrical circuitry and testing of these first solar cells, which were announced in 1954 by Bell Labs as the “Solar Battery.”
Chapin worked as an electrical engineer at Bell Telephone Laboratories during the 1950s. He is best known as one of the three inventors of the silicon photovoltaic cell, or solar cell, with chemist Calvin Fuller and physicist Gerald Pearson. Fuller had developed diffusion techniques to impregnate silicon wafers with a thin layer of boron impurities, establishing a p-n junction just beneath the silicon surface that served to convert sunlight into electrical energy. Chapin was responsible for the electrical circuitry and testing of these first solar cells, which were announced in 1954 by Bell Labs as the “Solar Battery.”
Chua, H.T.
A native of Singapore, Hua-Thye (H.T.) Chua earned a BSEE. from Ohio University and an MSEE from the University of California, Berkeley. Mr. Chua designed bipolar logic and memory devices at Fairchild Semiconductor and Intel’s first product a 64-bit Schottky TTL RAM. Together with John Birkner he designed and patented the PAL family of programmable logic devices at Monolithic Memories Inc. for which was named an MMI Fellow. A co-founder of Peer Research (renamed QuickLogic in 1991), he served as Vice President of Technology Development from April 1989 to December 1996.
A native of Singapore, Hua-Thye (H.T.) Chua earned a BSEE. from Ohio University and an MSEE from the University of California, Berkeley. Mr. Chua designed bipolar logic and memory devices at Fairchild Semiconductor and Intel’s first product a 64-bit Schottky TTL RAM. Together with John Birkner he designed and patented the PAL family of programmable logic devices at Monolithic Memories Inc. for which was named an MMI Fellow. A co-founder of Peer Research (renamed QuickLogic in 1991), he served as Vice President of Technology Development from April 1989 to December 1996.
Cline, Ron
Ron Cline received his BSEE from MIT in 1971. He began his semiconductor design career with the digital logic team at Signetics in Sunnyvale, California. As lead designer of many of Signetics’ memory products he applied the Schottky bipolar process technology to fuse-link PROM devices. In 1975 he designed the 82S100 FPLA, recognized as the industry's first commercially successful programmable logic product. Three years later he delivered the first programmable logic paper chosen for the ISSCC conference, based on what would eventually become the 82S107 registered field-programmable PLA. At Philips Research, Sunnyvale, in the late 80’s Cline was instrumental in the definition and development of the QUBiC BICMOS process. In 1994, he proposed the concept and architecture of a full-CMOS low power CPLD and led the Albuquerque, New Mexico design team in developing the Philips Semiconductors CoolRunner family. The CoolRunner product line and engineering group were acquired by Xilinx in 1999. He is currently a Senior Director of FPGA Product Development at that company.
Ron Cline received his BSEE from MIT in 1971. He began his semiconductor design career with the digital logic team at Signetics in Sunnyvale, California. As lead designer of many of Signetics’ memory products he applied the Schottky bipolar process technology to fuse-link PROM devices. In 1975 he designed the 82S100 FPLA, recognized as the industry's first commercially successful programmable logic product. Three years later he delivered the first programmable logic paper chosen for the ISSCC conference, based on what would eventually become the 82S107 registered field-programmable PLA. At Philips Research, Sunnyvale, in the late 80’s Cline was instrumental in the definition and development of the QUBiC BICMOS process. In 1994, he proposed the concept and architecture of a full-CMOS low power CPLD and led the Albuquerque, New Mexico design team in developing the Philips Semiconductors CoolRunner family. The CoolRunner product line and engineering group were acquired by Xilinx in 1999. He is currently a Senior Director of FPGA Product Development at that company.
Cochran, Michael J.
Michael Cochran worked with Gary Boone at Texas Instruments in the early 1970s on the design of calculator chips. He participated in the MOS circuit design, personally did much of the systems design, most of the logic design, and all of the software for the first microcomputer chip, the TMS 1000 family. He received numerous "Key Personnel" awards and in a New York Times article, was described by James Fischer, then Vice President of TI, as "Texas Instruments Most Prolific Inventor". He has almost 60 issued patents. As president of Cochran Consulting, Inc. in Richardson, TX, his experience ranges from missile tracking to medical ultrasound and hemodialysis machines.
Michael Cochran worked with Gary Boone at Texas Instruments in the early 1970s on the design of calculator chips. He participated in the MOS circuit design, personally did much of the systems design, most of the logic design, and all of the software for the first microcomputer chip, the TMS 1000 family. He received numerous "Key Personnel" awards and in a New York Times article, was described by James Fischer, then Vice President of TI, as "Texas Instruments Most Prolific Inventor". He has almost 60 issued patents. As president of Cochran Consulting, Inc. in Richardson, TX, his experience ranges from missile tracking to medical ultrasound and hemodialysis machines.
Cocke, John (May 30, 1925 - July16, 2002)
John Cocke was born in Charlotte, North Carolina. His father served on the Board of Trustees of Duke University, where Cocke did both his undergraduate and graduate work, culminating in a Ph.D. in Mathematics in 1956. He joined IBM the next year and worked there until his retirement. Cocke's first project at IBM was the Stretch Computer. He became a specialist in large systems, and made many advances in architecture and in compiler optimization. Cocke devised the concept of Reduced Instruction Set Computing (RISC) architecture (called the "801" after the building at the Thomas Watson Research Center at which he was working) to speed up and simplify the design of a telephone switching network. Cocke earned over 20 patents and won the National Medal of Technology (1991) and the National Medal of Science (1994).
John Cocke was born in Charlotte, North Carolina. His father served on the Board of Trustees of Duke University, where Cocke did both his undergraduate and graduate work, culminating in a Ph.D. in Mathematics in 1956. He joined IBM the next year and worked there until his retirement. Cocke's first project at IBM was the Stretch Computer. He became a specialist in large systems, and made many advances in architecture and in compiler optimization. Cocke devised the concept of Reduced Instruction Set Computing (RISC) architecture (called the "801" after the building at the Thomas Watson Research Center at which he was working) to speed up and simplify the design of a telephone switching network. Cocke earned over 20 patents and won the National Medal of Technology (1991) and the National Medal of Science (1994).
Collins, Milt
Milt Collins spent seven years at IBM as Manager of Basic Circuits for the SAGE computer. He also worked as Manager of Advanced Development at Olivetti before joining Transitron in 1961. In February 1965 he was recruited to Teradyne by Nick DeWolff to develop software for the PDP-8 minicomputer in the J259 semiconductor test system, the industry’s first commercial machine to employ computer control.
Milt Collins spent seven years at IBM as Manager of Basic Circuits for the SAGE computer. He also worked as Manager of Advanced Development at Olivetti before joining Transitron in 1961. In February 1965 he was recruited to Teradyne by Nick DeWolff to develop software for the PDP-8 minicomputer in the J259 semiconductor test system, the industry’s first commercial machine to employ computer control.
Conway, Lynn
Lynn Conway is a pioneer of microelectronics chip design and a recipient of many honors, including election as a Member of the National Academy of Engineering. Born in xxx and raised as Robert Conway in Mount Vernon, NY she received an MS in electrical engineering from Columbia in 1963, and did pioneering research in computer science after joining IBM Research at Yorktown Heights, NY, in 1964. After a sex change operation in 1968 she reestablished her career as Lynn Conway at Memorex in 1971 and moved to the new Xerox Palo Alto Research Center in 1973 where in 1978 she coauthored the influential text book Introduction to VLSI Systems on chip-design with Professor Carver Mead of Caltech. Concurrent with her work at Xerox PARC, she served as Visiting Associate Professor of Electrical Engineering and Computer Science at M.I.T. in 1978-79. She joined the University of Michigan in 1985 as Professor of EECS and Associate Dean of the College of Engineering.
Lynn Conway is a pioneer of microelectronics chip design and a recipient of many honors, including election as a Member of the National Academy of Engineering. Born in xxx and raised as Robert Conway in Mount Vernon, NY she received an MS in electrical engineering from Columbia in 1963, and did pioneering research in computer science after joining IBM Research at Yorktown Heights, NY, in 1964. After a sex change operation in 1968 she reestablished her career as Lynn Conway at Memorex in 1971 and moved to the new Xerox Palo Alto Research Center in 1973 where in 1978 she coauthored the influential text book Introduction to VLSI Systems on chip-design with Professor Carver Mead of Caltech. Concurrent with her work at Xerox PARC, she served as Visiting Associate Professor of Electrical Engineering and Computer Science at M.I.T. in 1978-79. She joined the University of Michigan in 1985 as Professor of EECS and Associate Dean of the College of Engineering.
Cook, Bob
Bob Cook worked as an electrical engineer at Texas Instruments, Dallas TX in the late 1950s and early 1960s where was lead circuit designer of the company’s first monolithic integrated circuit family, the SN51 series of DCTL devices. Two members of this family were the first ICs in space in the 1963 Interplanetary Monitoring Probe (IMP) satellite.
Bob Cook worked as an electrical engineer at Texas Instruments, Dallas TX in the late 1950s and early 1960s where was lead circuit designer of the company’s first monolithic integrated circuit family, the SN51 series of DCTL devices. Two members of this family were the first ICs in space in the 1963 Interplanetary Monitoring Probe (IMP) satellite.
Corrigan, Wilfred
Born and raised in World War II-era Liverpool, England Wilfred Corrigan earned a BSc in Chemical Engineering from the Imperial College of Science, London, England. He emigrated to the U.S to work as a production engineer at Transitron Corporation. At Motorola in Phoenix in 1962 he established a high-volume epitaxial process for silicon and germanium transistors and earned five patents related to process engineering. He moved with Lester Hogan to help rebuild Fairchild Semiconductor as director of Discrete Product Groups after the departure of Robert Noyce in 1968. Corrigan succeeded Hogan as president and chief executive officer of Fairchild Camera and Instrument Corporation in 1974. He worked with Robert Noyce of Intel, Jerry Sanders of AMD and Charlie Sporck of National Semiconductor to form the Semiconductor Industry Association (SIA) in 1977 and served as chairman from 1989-1990 and 2003-2004. In 1981 he co-founded ASIC pioneer LSI Logic Corporation where he served as president, CEO, and chairman until 2005.
Born and raised in World War II-era Liverpool, England Wilfred Corrigan earned a BSc in Chemical Engineering from the Imperial College of Science, London, England. He emigrated to the U.S to work as a production engineer at Transitron Corporation. At Motorola in Phoenix in 1962 he established a high-volume epitaxial process for silicon and germanium transistors and earned five patents related to process engineering. He moved with Lester Hogan to help rebuild Fairchild Semiconductor as director of Discrete Product Groups after the departure of Robert Noyce in 1968. Corrigan succeeded Hogan as president and chief executive officer of Fairchild Camera and Instrument Corporation in 1974. He worked with Robert Noyce of Intel, Jerry Sanders of AMD and Charlie Sporck of National Semiconductor to form the Semiconductor Industry Association (SIA) in 1977 and served as chairman from 1989-1990 and 2003-2004. In 1981 he co-founded ASIC pioneer LSI Logic Corporation where he served as president, CEO, and chairman until 2005.
Crabtree, Willy
Willy Crabtree worked with George Thiess at a small Texas Instruments spin-off company, Electro-Data, Inc. of Garland, TX to develop a digital quartz wrist watch with a light-emitting diode display. Looking for an established watch company to market their product they approached John Bergy a director of the Hamilton Watch Division, which was developing an electronic analog quartz watch. The Hamilton/Electro-Data joint enterprise completed their first prototypes in 1970 and the world's first electronic digital watch, the Pulsar, was introduced on the market in 1972.
Willy Crabtree worked with George Thiess at a small Texas Instruments spin-off company, Electro-Data, Inc. of Garland, TX to develop a digital quartz wrist watch with a light-emitting diode display. Looking for an established watch company to market their product they approached John Bergy a director of the Hamilton Watch Division, which was developing an electronic analog quartz watch. The Hamilton/Electro-Data joint enterprise completed their first prototypes in 1970 and the world's first electronic digital watch, the Pulsar, was introduced on the market in 1972.
Cray, Seymour (1925 – 1996)
Seymour Cray was a pioneer in supercomputing. His innovations include vector register technology, cooling technologies, and magnetic amplifiers. Born in Chippewa Falls, WI in 1925 he served in Europe in World War II and earned a BS in Electrical Engineering and an MS in Applied Mathematics from the University of Minnesota, graduating in 1951. He joined Engineering Research Associates (ERA), later acquired by Univac, and worked on computer designs for the Navy. With William Norris he helped to found Control Data Corporation in Minneapolis, MN in 1957. Cray was responsible for the design of that company's most successful large-scale computers: the CDC 1604, the CDC 6600, and the CDC 7000. In 1972, he founded Cray Research to design and build general-purpose supercomputers, notably the Cray-1, which established a new standard in hogh-performance computing in 1976. In 1981, Cray relinquished his position as chairman of the board to devote himself full-time to the design of the Cray-2, which was introduced in 1985. He died in an automobile accident in Colorado on September 22, 1996. .
Seymour Cray was a pioneer in supercomputing. His innovations include vector register technology, cooling technologies, and magnetic amplifiers. Born in Chippewa Falls, WI in 1925 he served in Europe in World War II and earned a BS in Electrical Engineering and an MS in Applied Mathematics from the University of Minnesota, graduating in 1951. He joined Engineering Research Associates (ERA), later acquired by Univac, and worked on computer designs for the Navy. With William Norris he helped to found Control Data Corporation in Minneapolis, MN in 1957. Cray was responsible for the design of that company's most successful large-scale computers: the CDC 1604, the CDC 6600, and the CDC 7000. In 1972, he founded Cray Research to design and build general-purpose supercomputers, notably the Cray-1, which established a new standard in hogh-performance computing in 1976. In 1981, Cray relinquished his position as chairman of the board to devote himself full-time to the design of the Cray-2, which was introduced in 1985. He died in an automobile accident in Colorado on September 22, 1996. .
Czochralski, Jan (October 23, 1885 - April 22, 1953)
Jan Czochralski (pronounced cho-HRAL-skee) was a Polish chemist who discovered the Czochralski process that is used to grow single crystals for the production of semiconductor wafers. He was born in Kcynia, at that time under Prussian administration. In 1904 he moved to Berlin, Germany where, from 1907 to 1917, he worked as an engineer in Allgemeine Elektrizitats Gesellschaft (AEG) while studying chemical and metallurgical science and fine arts at Berlin University. He developed the Czochralski method in 1916. It was used initially to measure the crystallisation rate of metals. In 1917 Czochralski organized the research laboratory of Metallbank und Metallurgische Gesellschaft in Frankfurt am Main where he served as director until 1928. He was one of the founders and the president of the German Scientific Society of Metal Sciences and in 1929 returned to Poland where he organized the Institute of Metallurgy and Metal Sciences of Warsaw Technical University. He supported the Polish resistance during World War II and afterwards ran BION, a small drug firm in his native Kcynia.
Jan Czochralski (pronounced cho-HRAL-skee) was a Polish chemist who discovered the Czochralski process that is used to grow single crystals for the production of semiconductor wafers. He was born in Kcynia, at that time under Prussian administration. In 1904 he moved to Berlin, Germany where, from 1907 to 1917, he worked as an engineer in Allgemeine Elektrizitats Gesellschaft (AEG) while studying chemical and metallurgical science and fine arts at Berlin University. He developed the Czochralski method in 1916. It was used initially to measure the crystallisation rate of metals. In 1917 Czochralski organized the research laboratory of Metallbank und Metallurgische Gesellschaft in Frankfurt am Main where he served as director until 1928. He was one of the founders and the president of the German Scientific Society of Metal Sciences and in 1929 returned to Poland where he organized the Institute of Metallurgy and Metal Sciences of Warsaw Technical University. He supported the Polish resistance during World War II and afterwards ran BION, a small drug firm in his native Kcynia.
d'Arbeloff, Alex
Alexander Vladimir d’Arbeloff was a co-founder of Teradyne, Boston, MA-based manufacturer of automatic test equipment in 1960. After graduating in 1949 with a degree in management from MIT, together with another MIT alumnus Nicholas DeWolf, they built Teradyne into one of the largest players in the global ATE market as integrated circuits became increasingly important in every aspect of technology. He remained with Teradyne until his retirement as chairman in 2000. D’Arbeloff was a director of Lotus Development Corporation and a director of the Whitehead Institute. He was a member of the MIT Corporation from 1989, and Chairman of the Corporation from 1997 to 2003. He was also a former chairman of the Massachusetts High Technology Council.
Alexander Vladimir d’Arbeloff was a co-founder of Teradyne, Boston, MA-based manufacturer of automatic test equipment in 1960. After graduating in 1949 with a degree in management from MIT, together with another MIT alumnus Nicholas DeWolf, they built Teradyne into one of the largest players in the global ATE market as integrated circuits became increasingly important in every aspect of technology. He remained with Teradyne until his retirement as chairman in 2000. D’Arbeloff was a director of Lotus Development Corporation and a director of the Whitehead Institute. He was a member of the MIT Corporation from 1989, and Chairman of the Corporation from 1997 to 2003. He was also a former chairman of the Massachusetts High Technology Council.
Davydov, Boris
A scientist at the Ioffe Physico-Technical Institute in Leningrad, Boris Davydov described a model for the rectification action of a point-contact diode in copper oxide in a paper “On the rectification of current at the boundary between two semiconductors,” in a Russian journal in 1938. This work published, contemporaneously with that of Nevill Mott in the U.K. and Walter Schottky in Germany, influenced John Bardeen in his understanding of semiconductor phenomena.
A scientist at the Ioffe Physico-Technical Institute in Leningrad, Boris Davydov described a model for the rectification action of a point-contact diode in copper oxide in a paper “On the rectification of current at the boundary between two semiconductors,” in a Russian journal in 1938. This work published, contemporaneously with that of Nevill Mott in the U.K. and Walter Schottky in Germany, influenced John Bardeen in his understanding of semiconductor phenomena.
Deal, Bruce (1927 – 2007)
Bruce Deal was born and raised in Nebraska. He graduated with a PhD from Iowa State University in 1955 and joined the Kaiser Aluminum laboratory in Spokane, WA. He moved to Rheem Semiconductor in Mountain View, CA and on to Fairchild R & D in Palo Alto in 1963 where he was hired by C. T. Sah to work with Andy Grove and Ed Snow on MOS transistor technology. Deal remained as a Principal Technologist until the company was acquired by National Semiconductor in 1988. He was president of the Electrochemical Society (1988-1989) and in 1992 was appointed a consulting professor in the Electrical Engineering Department of Stanford University, CA.
Bruce Deal was born and raised in Nebraska. He graduated with a PhD from Iowa State University in 1955 and joined the Kaiser Aluminum laboratory in Spokane, WA. He moved to Rheem Semiconductor in Mountain View, CA and on to Fairchild R & D in Palo Alto in 1963 where he was hired by C. T. Sah to work with Andy Grove and Ed Snow on MOS transistor technology. Deal remained as a Principal Technologist until the company was acquired by National Semiconductor in 1988. He was president of the Electrochemical Society (1988-1989) and in 1992 was appointed a consulting professor in the Electrical Engineering Department of Stanford University, CA.
Dennard, Robert H
Robert Dennard received the B.S. and M.S. degrees in electrical engineering from Southern Methodist University, Dallas, Texas, in 1954 and 1956, respectively, and the Ph.D. degree from the Carnegie Institute of Technology in 1958. Subsequently he joined the IBM Research Division, where his early experience included the study of new devices and circuits for logic and memory applications, and the development of advanced data communication techniques. Since 1963, he has been located at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York, where he has been involved in microelectronics research and development since its beginning. His primary work has been in field-effect transistors (FETs) and the integrated digital circuits that use them. In 1967 he invented the dynamic RAM memory cell used in most computers today. With others, he developed the concept of FET scaling in 1972. In 1979 he was appointed an IBM Fellow. Dr. Dennard is a Fellow of the IEEE and received the IEEE Cledo Brunetti Award in 1982. He was elected to the National Academy of Engineering in 1984. Dr. Dennard received the National Medal of Technology from President Reagan in 1988 for his invention of the one-transistor dynamic memory cell. He also received the I.R.I. Achievement Award from the Industrial Research Institute in 1989, and the Harvey Prize from Technion in Haifa, Israel, in 1990. [Credit: IBM, J. Res. Develop. Vol. 39 No. 5, September 1995]
Robert Dennard received the B.S. and M.S. degrees in electrical engineering from Southern Methodist University, Dallas, Texas, in 1954 and 1956, respectively, and the Ph.D. degree from the Carnegie Institute of Technology in 1958. Subsequently he joined the IBM Research Division, where his early experience included the study of new devices and circuits for logic and memory applications, and the development of advanced data communication techniques. Since 1963, he has been located at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York, where he has been involved in microelectronics research and development since its beginning. His primary work has been in field-effect transistors (FETs) and the integrated digital circuits that use them. In 1967 he invented the dynamic RAM memory cell used in most computers today. With others, he developed the concept of FET scaling in 1972. In 1979 he was appointed an IBM Fellow. Dr. Dennard is a Fellow of the IEEE and received the IEEE Cledo Brunetti Award in 1982. He was elected to the National Academy of Engineering in 1984. Dr. Dennard received the National Medal of Technology from President Reagan in 1988 for his invention of the one-transistor dynamic memory cell. He also received the I.R.I. Achievement Award from the Industrial Research Institute in 1989, and the Harvey Prize from Technion in Haifa, Israel, in 1990. [Credit: IBM, J. Res. Develop. Vol. 39 No. 5, September 1995]
Derick, Lincoln
As a technician at Bell Labs, Derick and chemist Carl Frosch discovered the crucial protective oxide layer on silicon during the spring of 1955. While diffusing trace impurities into silicon wafers, they accidentally ignited a hydrogen fire that coated the wafers with silicon dioxide. They subsequently developed techniques to etch tiny openings in this layer and use them in patterning the underlying silicon with n-type and p-type impurities. This key breakthrough eventually enabled the invention of the silicon integrated circuit.
As a technician at Bell Labs, Derick and chemist Carl Frosch discovered the crucial protective oxide layer on silicon during the spring of 1955. While diffusing trace impurities into silicon wafers, they accidentally ignited a hydrogen fire that coated the wafers with silicon dioxide. They subsequently developed techniques to etch tiny openings in this layer and use them in patterning the underlying silicon with n-type and p-type impurities. This key breakthrough eventually enabled the invention of the silicon integrated circuit.
DeWolf, Nicholas (July 12, 1928 – April 16, 2006)
“A distant relative” of American patriot Ben Franklin, Nicholas DeWolf was born to a prosperous family in Philadelphia in 1928. He graduated from MIT at age 19, went to work as an engineer for General Electric and left to become chief engineer at Transitron in the mid-1950s where he worked on testing new transistor products. In 1960 DeWolf co-founded Teradyne with Massachusetts Institute of Technology (MIT) classmate Alex d'Arbeloff. During his eleven years as CEO of Teradyne, DeWolf is credited with designing more than 300 semiconductor and other test systems, including the J259, the world's first computer-operated integrated circuit tester. He left Teradyne in 1971, and lived with his family in Aspen, CO where he was involved in civic, charitable and educational programs. In 1979, DeWolf was awarded the Semiconductor Equipment & Materials International (SEMI) Award for outstanding contributions to the industry.
“A distant relative” of American patriot Ben Franklin, Nicholas DeWolf was born to a prosperous family in Philadelphia in 1928. He graduated from MIT at age 19, went to work as an engineer for General Electric and left to become chief engineer at Transitron in the mid-1950s where he worked on testing new transistor products. In 1960 DeWolf co-founded Teradyne with Massachusetts Institute of Technology (MIT) classmate Alex d'Arbeloff. During his eleven years as CEO of Teradyne, DeWolf is credited with designing more than 300 semiconductor and other test systems, including the J259, the world's first computer-operated integrated circuit tester. He left Teradyne in 1971, and lived with his family in Aspen, CO where he was involved in civic, charitable and educational programs. In 1979, DeWolf was awarded the Semiconductor Equipment & Materials International (SEMI) Award for outstanding contributions to the industry.
Dobkin, Robert
Robert Dobkin is a founder, vice president and Chief Technical Officer of Linear Technology Corporation. At Linear he was responsible for all new product development until 1999. Prior to founding Linear Technology in 1981, Mr. Dobkin was Director of Advanced Circuit Development at National Semiconductor for eleven years. He has been intimately involved in the development of high performance linear integrated circuits for over 30 years and has generated many industry standard circuits. Mr. Dobkin holds over 50 patents pertaining to linear ICs and has authored over 50 articles and papers. He attended the Massachusetts Institute of Technology.
Robert Dobkin is a founder, vice president and Chief Technical Officer of Linear Technology Corporation. At Linear he was responsible for all new product development until 1999. Prior to founding Linear Technology in 1981, Mr. Dobkin was Director of Advanced Circuit Development at National Semiconductor for eleven years. He has been intimately involved in the development of high performance linear integrated circuits for over 30 years and has generated many industry standard circuits. Mr. Dobkin holds over 50 patents pertaining to linear ICs and has authored over 50 articles and papers. He attended the Massachusetts Institute of Technology.
Dooley, Dan
Dan Dooley graduated with an MSEE from Cal State Long Beach and an MBA from Pepperdine University in 1978. He worked for Motorola, Hughes, and TRW Systems in Southern California before joining Marvin Rudin and Garth Wilson in starting Precision Monolithics Inc. in Silicon Valley in 1969. While at PMI, Dooley designed the first fully monolithic DAC – the DAC01 - a 6-bit device with a diffused resistor network and an output op-amp. He joined National Semiconductor in 1980 as vice president of special products, including optoelectronic devices, hybrids, modules, and sensors. After leaving National in 1986, Dooley consulted with start-ups Lasa Industries and Integrated Sensor Solutions.
Dan Dooley graduated with an MSEE from Cal State Long Beach and an MBA from Pepperdine University in 1978. He worked for Motorola, Hughes, and TRW Systems in Southern California before joining Marvin Rudin and Garth Wilson in starting Precision Monolithics Inc. in Silicon Valley in 1969. While at PMI, Dooley designed the first fully monolithic DAC – the DAC01 - a 6-bit device with a diffused resistor network and an output op-amp. He joined National Semiconductor in 1980 as vice president of special products, including optoelectronic devices, hybrids, modules, and sensors. After leaving National in 1986, Dooley consulted with start-ups Lasa Industries and Integrated Sensor Solutions.
Dummer, Geoffrey (February 25, 1909 – September 16, 2002)
Geoffrey W. A. Dummer joined the British Telecommunications Research Establishment (TRE) in 1939. He was awarded the MBE and the United States Medal of Freedom for his wartime work on radar display equipment and aircraft flight simulators. As a pioneer in reliability engineering he served on European and NATO component standardization committees. In 1952 he gave a paper at a conference in Washington, DC that predicted the development of the integrated circuit. Work on the concept at his laboratory at the Royal Radar Establishment in Malvern and subcontracted to the Plessey Company failed to produce any practical results.
Geoffrey W. A. Dummer joined the British Telecommunications Research Establishment (TRE) in 1939. He was awarded the MBE and the United States Medal of Freedom for his wartime work on radar display equipment and aircraft flight simulators. As a pioneer in reliability engineering he served on European and NATO component standardization committees. In 1952 he gave a paper at a conference in Washington, DC that predicted the development of the integrated circuit. Work on the concept at his laboratory at the Royal Radar Establishment in Malvern and subcontracted to the Plessey Company failed to produce any practical results.
Dunwoody, Henry (1842 – 1933)
Born in Highland County, Ohio, Henry Harrison Chase Dunwoody graduated from United States Military College, West Point in 1866. He was in was in charge of weather forecasting for the Weather Bureau for many year and headed the Signal Corps of the American Army in the Cuban Campaign rising to the rank of Colonel, Signal Officer, U. S. Army in 1898. In 1906 he received a patent for the “carborundum” (silicon carbide) cat’s-whisker crystal radio detector shortly after Pickard patented the silicon detector.
Born in Highland County, Ohio, Henry Harrison Chase Dunwoody graduated from United States Military College, West Point in 1866. He was in was in charge of weather forecasting for the Weather Bureau for many year and headed the Signal Corps of the American Army in the Cuban Campaign rising to the rank of Colonel, Signal Officer, U. S. Army in 1898. In 1906 he received a patent for the “carborundum” (silicon carbide) cat’s-whisker crystal radio detector shortly after Pickard patented the silicon detector.
Edison, Thomas (February 11, 1847 - October 18, 1931)
Revered American inventor Thomas Alva Edison was born in Milan, Ohio and spent much of his youth in Port Huron, Michigan. A precocious child, he took a job as a trainboy on the Grand Trunk Railway at age 12 where he learned to use the telegraph. From 1862 Edison worked as a roving telegrapher until in 1869 he began a full-time career inventing at a workshop in Newark, New Jersey where he produced the Edison Universal Stock Printer and the automatic telegraph. In 1876 Edison opened a laboratory in Menlo Park, NJ where he was dubbed the "Wizard of Menlo Park" for his inventions of the carbon-button transmitter and the tinfoil phonograph. In the late 1870s, he established the Edison Electric Light Company based on his incandescent electric light bulb. In 1882, he supervised the installation of the first commercial, central power system in lower Manhattan. In 1883, one of Edison's engineers William J. Hammer discovered the phenomenon known as "Edison effect," which led to the electron tube. Edison also introduced the commercial phonograph, the Edison storage battery, the mimeograph, and the first talking moving pictures. In 1915, he was appointed president of the U.S. Navy Consulting Board. In total he patented more than 1,000 discoveries.
Revered American inventor Thomas Alva Edison was born in Milan, Ohio and spent much of his youth in Port Huron, Michigan. A precocious child, he took a job as a trainboy on the Grand Trunk Railway at age 12 where he learned to use the telegraph. From 1862 Edison worked as a roving telegrapher until in 1869 he began a full-time career inventing at a workshop in Newark, New Jersey where he produced the Edison Universal Stock Printer and the automatic telegraph. In 1876 Edison opened a laboratory in Menlo Park, NJ where he was dubbed the "Wizard of Menlo Park" for his inventions of the carbon-button transmitter and the tinfoil phonograph. In the late 1870s, he established the Edison Electric Light Company based on his incandescent electric light bulb. In 1882, he supervised the installation of the first commercial, central power system in lower Manhattan. In 1883, one of Edison's engineers William J. Hammer discovered the phenomenon known as "Edison effect," which led to the electron tube. Edison also introduced the commercial phonograph, the Edison storage battery, the mimeograph, and the first talking moving pictures. In 1915, he was appointed president of the U.S. Navy Consulting Board. In total he patented more than 1,000 discoveries.
Emeis, R.
Reimer Emeis worked as a research scientist on silicon alloy power transistors and crystal growth techniques in the semiconductor research laboratories of Siemens-Schuckertwerke AG, Pretzfeld, Germany in the 1950’s. He independently developed a version of the Floating Zone Process, known as the “Siemens-process,” described in the journal Naturforschung in 1954.
Reimer Emeis worked as a research scientist on silicon alloy power transistors and crystal growth techniques in the semiconductor research laboratories of Siemens-Schuckertwerke AG, Pretzfeld, Germany in the 1950’s. He independently developed a version of the Floating Zone Process, known as the “Siemens-process,” described in the journal Naturforschung in 1954.
Erdi, George
George Erdi was born in Budapest, Hungary on July 1, 1939. He received the Bachelor of Engineering degree in 1965 from McGill University, Montreal, Canada and the M.S. degree in 1966 from the University of California, Berkeley. In 1966 he joined the Linear Integrated Circuit Section of Fairchild Semiconductor’s Research and Development Laboratory, Palo Alto, Calif., where his activities included the design of the µA722 monolithic digital to analog converter and a precision operational amplifier. In 1969 he was one of the founding employees of Precision Monolithic Inc., Santa Clara, CA (where he designed the OP7 op-amp) and of Linear Technology, Inc in 1981 where he was responsible for precision operational amplifiers, D/A converters, precision comparators and other analog functions. He authored numerous technical articles relating to his design activities.
George Erdi was born in Budapest, Hungary on July 1, 1939. He received the Bachelor of Engineering degree in 1965 from McGill University, Montreal, Canada and the M.S. degree in 1966 from the University of California, Berkeley. In 1966 he joined the Linear Integrated Circuit Section of Fairchild Semiconductor’s Research and Development Laboratory, Palo Alto, Calif., where his activities included the design of the µA722 monolithic digital to analog converter and a precision operational amplifier. In 1969 he was one of the founding employees of Precision Monolithic Inc., Santa Clara, CA (where he designed the OP7 op-amp) and of Linear Technology, Inc in 1981 where he was responsible for precision operational amplifiers, D/A converters, precision comparators and other analog functions. He authored numerous technical articles relating to his design activities.
Esaki, Leo
Born in Osaka, Japan in 1925, Leona (Leo) Esaki is one of only three Japanese physicists to receive a Nobel Prize. He earned a B.S. in Physics in 1947 and a PhD in 1959 from the University of Tokyo. Esaki joined Sony Corporation where, during research into heavily-doped Ge and Si material, in 1957 he discovered the first commercial quantum electron device, the tunnel diode for which he received the 1973 Nobel physics prize. In 1960 Esaki joined the IBM Thomas J. Watson Research Center, Yorktown Heights, New York as a resident consultant. He was made an IBM Fellow in 1967. His work on man-made semiconductor structures such as superlattices and quantum wells won him numerous awards and academic honors in Japan and the US.
Born in Osaka, Japan in 1925, Leona (Leo) Esaki is one of only three Japanese physicists to receive a Nobel Prize. He earned a B.S. in Physics in 1947 and a PhD in 1959 from the University of Tokyo. Esaki joined Sony Corporation where, during research into heavily-doped Ge and Si material, in 1957 he discovered the first commercial quantum electron device, the tunnel diode for which he received the 1973 Nobel physics prize. In 1960 Esaki joined the IBM Thomas J. Watson Research Center, Yorktown Heights, New York as a resident consultant. He was made an IBM Fellow in 1967. His work on man-made semiconductor structures such as superlattices and quantum wells won him numerous awards and academic honors in Japan and the US.
Faggin, Federico
Federico Faggin was born in 1941 in Vicenza, Italy. After attending technical high school, he worked at Olivetti where he designed and built his first computer at age 19. He earned a doctorate in physics from the University of Padua in 1965 and joined the faculty as an assistant professor. Faggin worked at SGS-Fairchild in Milan on MOS ICs and transferred to Fairchild R&D in Palo Alto, CA in 1968 where he led the development of the MOS silicon gate process technology and designed the first commercial MOS Silicon-Gate IC. In 1970 he joined Intel where he led the design of the Intel 4004 and 8008 microprocessors. He also conceived and supervised the design of Intel's first high-performance 8-bit microprocessor, the 8080. Mr. Faggin co-founded and was CEO of Zilog Inc. (1974) where he conceived the Z80 microprocessor and the Z8 microcontroller. He was also co-founder and CEO of Cygnet Technologies, Inc. (1982), and Synaptics, Inc. (1986). In 2003, he became CEO of Foveon, Inc.
Federico Faggin was born in 1941 in Vicenza, Italy. After attending technical high school, he worked at Olivetti where he designed and built his first computer at age 19. He earned a doctorate in physics from the University of Padua in 1965 and joined the faculty as an assistant professor. Faggin worked at SGS-Fairchild in Milan on MOS ICs and transferred to Fairchild R&D in Palo Alto, CA in 1968 where he led the development of the MOS silicon gate process technology and designed the first commercial MOS Silicon-Gate IC. In 1970 he joined Intel where he led the design of the Intel 4004 and 8008 microprocessors. He also conceived and supervised the design of Intel's first high-performance 8-bit microprocessor, the 8080. Mr. Faggin co-founded and was CEO of Zilog Inc. (1974) where he conceived the Z80 microprocessor and the Z8 microcontroller. He was also co-founder and CEO of Cygnet Technologies, Inc. (1982), and Synaptics, Inc. (1986). In 2003, he became CEO of Foveon, Inc.
Farina, Don
After earning a BSEE from New York University in 1953, Don Farina worked at Sperry Gyroscope where he was an early user of Fairchild mesa transistors. He joined Fairchild in 1959 as an applications engineer in co-founder Vic Grinch’s department responsible for measuring transistor parameters. Bob Norman credits Don’s work on characterizing the small geometry 2N1210 planar transistor over several decades of collector current with providing essential data for designing the first monolithic integrated circuits. Farina followed Norman to General Microelectronics in 1963 where he worked on MOS devices. He founded semiconductor and systems design house Integrated Systems Technology after Philco Ford acquired GME in 1966.
After earning a BSEE from New York University in 1953, Don Farina worked at Sperry Gyroscope where he was an early user of Fairchild mesa transistors. He joined Fairchild in 1959 as an applications engineer in co-founder Vic Grinch’s department responsible for measuring transistor parameters. Bob Norman credits Don’s work on characterizing the small geometry 2N1210 planar transistor over several decades of collector current with providing essential data for designing the first monolithic integrated circuits. Farina followed Norman to General Microelectronics in 1963 where he worked on MOS devices. He founded semiconductor and systems design house Integrated Systems Technology after Philco Ford acquired GME in 1966.
Faraday, Michael (September 22, 1791-August 25, 1867)
Born in London, England, Michael Faraday gained his scientific education after leaving school at 14 by reading extensively. While an assistant to chemist Sir Humphry Davy at the Royal Institution he developed and published work on electromagnetic rotation (the principle behind the electric motor). Prior to discovering electromagnetic induction, the principle behind the electric transformer and generator in 1831 he was elected a member of the Royal Society (1924) and established a reputation as the outstanding scientific lecturer of his time. He continued to develop his ideas about electricity and was appointed to several important positions in the scientific community including Professor of Chemistry at the Royal Military Academy in Woolwich. Originally coined in his honor to describe a unit of electrical charge, the name farad was later applied to today’s unit of capacitance.
Born in London, England, Michael Faraday gained his scientific education after leaving school at 14 by reading extensively. While an assistant to chemist Sir Humphry Davy at the Royal Institution he developed and published work on electromagnetic rotation (the principle behind the electric motor). Prior to discovering electromagnetic induction, the principle behind the electric transformer and generator in 1831 he was elected a member of the Royal Society (1924) and established a reputation as the outstanding scientific lecturer of his time. He continued to develop his ideas about electricity and was appointed to several important positions in the scientific community including Professor of Chemistry at the Royal Military Academy in Woolwich. Originally coined in his honor to describe a unit of electrical charge, the name farad was later applied to today’s unit of capacitance.
Feeney, Hal
Hal Feeney earned a BSEE from Notre Dame University and an MSEE from Stanford University. He joined Intel and worked as a design engineer on the first 4-bit (4004) and 8-bit (8008) microprocessor projects. After transferring to microprocessor marketing, he served as manager of Business Planning for Microcomputer Systems and Development Systems. At market research company Dataquest, Mr. Feeney was Group Vice President and Director of Dataquest's Semiconductor Group before founding Pathfinder Research in San Jose, CA.
Hal Feeney earned a BSEE from Notre Dame University and an MSEE from Stanford University. He joined Intel and worked as a design engineer on the first 4-bit (4004) and 8-bit (8008) microprocessor projects. After transferring to microprocessor marketing, he served as manager of Business Planning for Microcomputer Systems and Development Systems. At market research company Dataquest, Mr. Feeney was Group Vice President and Director of Dataquest's Semiconductor Group before founding Pathfinder Research in San Jose, CA.
Felker, Jean H. (March 14, 1919 – February 27, 1994)
Born in Centralia, IL, Jean Howard Felker received a BSEE from Washington University, St. Louis, MI, in 1941. Commissioned into the navy in 1942, he learned radar technology in England and served at Fort Monmouth, NJ until 1945 when he joined Bell Laboratories, Military Systems Laboratory in Whippany, NJ. In 1950 he demonstrated computer logic circuits using point contact transistors that led to an Air Force contract to build TRADIC, the first transistorized computer in the US. He later served as vice-president of operations for the New Jersey Bell Telephone Company and vice-president for software and processor technologies at Bell Laboratories before retiring in 1981.
Born in Centralia, IL, Jean Howard Felker received a BSEE from Washington University, St. Louis, MI, in 1941. Commissioned into the navy in 1942, he learned radar technology in England and served at Fort Monmouth, NJ until 1945 when he joined Bell Laboratories, Military Systems Laboratory in Whippany, NJ. In 1950 he demonstrated computer logic circuits using point contact transistors that led to an Air Force contract to build TRADIC, the first transistorized computer in the US. He later served as vice-president of operations for the New Jersey Bell Telephone Company and vice-president for software and processor technologies at Bell Laboratories before retiring in 1981.
Fleming, John (November 29, 1849 - April 18, 1945)
Physicist John Ambrose Fleming was born in Lancaster, England as the eldest of seven children of a Congregational minister. Throughout his life a he remained a devout Christian and lay preacher. He graduated from University College, London and taught at several universities before becoming the first Professor of Electrical Engineering at University College. In 1904 he invented and patented a two-electrode vacuum-tube rectifier, which he called an oscillation valve. It was also known as the Fleming valve, thermionic valve, and vacuum tube diode. He was knighted (made Sir John) in 1929 and was widely recognized for his role in establishing physical and engineering approaches to the study of radio.
Physicist John Ambrose Fleming was born in Lancaster, England as the eldest of seven children of a Congregational minister. Throughout his life a he remained a devout Christian and lay preacher. He graduated from University College, London and taught at several universities before becoming the first Professor of Electrical Engineering at University College. In 1904 he invented and patented a two-electrode vacuum-tube rectifier, which he called an oscillation valve. It was also known as the Fleming valve, thermionic valve, and vacuum tube diode. He was knighted (made Sir John) in 1929 and was widely recognized for his role in establishing physical and engineering approaches to the study of radio.
Forbes, Don
Don Forbes worked as a draughtsman and engineer at Fairchild Research and Development Laboratory in Palo Alto, CA. In 1964-65 he created the engineering drawings and contributed to the design of the ceramic dual-inline-package (CERDIP) under Rex Rice, manager of the Digital Systems Research Department.
Don Forbes worked as a draughtsman and engineer at Fairchild Research and Development Laboratory in Palo Alto, CA. In 1964-65 he created the engineering drawings and contributed to the design of the ceramic dual-inline-package (CERDIP) under Rex Rice, manager of the Digital Systems Research Department.
Frenkel, Jacov (February 10, 1894 - January 23, 1952)
Physicist Yakov Il'ich Frenkel (also known as Jacov Frenkel when he published in English) was born in Rostov-on-Don, Russia. He graduated from Petrograd (St. Petersburg) University in 1913 and joined the staff of the Ioffe Physico-Technical Institute in 1921 where he taught and performed research until his death in 1952. Frenkel contributed in several areas of semiconductor physics, including identifying the Frenkel crystallographic defect and an important monograph on the "Kinetic theory of liquids" based on his extensive studies of the theory of liquid state.
Physicist Yakov Il'ich Frenkel (also known as Jacov Frenkel when he published in English) was born in Rostov-on-Don, Russia. He graduated from Petrograd (St. Petersburg) University in 1913 and joined the staff of the Ioffe Physico-Technical Institute in 1921 where he taught and performed research until his death in 1952. Frenkel contributed in several areas of semiconductor physics, including identifying the Frenkel crystallographic defect and an important monograph on the "Kinetic theory of liquids" based on his extensive studies of the theory of liquid state.
Frohman-Bentchkowsky, Dov
Dov Frohman-Bentchkowsky was born in Amsterdam, Holland, in 1939. He received the BSc degree in electrical engineering in 1963 from the Israeli Institute of Technology, Haifa, Israel, and the MS … See: IEEE Transactions on Electron Devices Vol ED-28, No. 3 (March 1981) pg 357
Dov Frohman-Bentchkowsky was born in Amsterdam, Holland, in 1939. He received the BSc degree in electrical engineering in 1963 from the Israeli Institute of Technology, Haifa, Israel, and the MS … See: IEEE Transactions on Electron Devices Vol ED-28, No. 3 (March 1981) pg 357
Frosch, Carl J.
A physical chemist at Bell Labs during the 1950s, Frosh and his technician Lincoln Derick discovered the crucial protective oxide layer on silicon in the spring of 1955. While diffusing trace impurities into wafers of silicon, they accidentally ignited a hydrogen fire that coated the wafers with silicon-dioxide layer. They subsequently developed techniques to etch tiny openings in this layer and use them in patterning the underlying silicon with n-type and p-type impurities, publishing their methods in the September 1957 issue of the Journal of the Electrochemical Society. This breakthrough eventually enabled the invention of the silicon integrated circuit.
A physical chemist at Bell Labs during the 1950s, Frosh and his technician Lincoln Derick discovered the crucial protective oxide layer on silicon in the spring of 1955. While diffusing trace impurities into wafers of silicon, they accidentally ignited a hydrogen fire that coated the wafers with silicon-dioxide layer. They subsequently developed techniques to etch tiny openings in this layer and use them in patterning the underlying silicon with n-type and p-type impurities, publishing their methods in the September 1957 issue of the Journal of the Electrochemical Society. This breakthrough eventually enabled the invention of the silicon integrated circuit.
Fullagar, Dave
After earning a MSEE from Cambridge University in 1965, Scottish engineer Dave Fullagar emigrated to join Transitron and worked briefly for Tom Longo on the 16-bit RAM. Moving to the Fairchild Semiconductor R&D Laboratory in Palo Alto he made important contributions to the manufacturability of Bob Widlar’s design of the 709 operational amplifier. His 1968 design of an internally compensated competitor for National’s LM101 device (also designed by Widlar), designated the 741, became the world’s best selling op amp. Recruited by Intersil in 1969 as the company's first linear designer Fullagar went on to manage the European operation and later vice president of R&D. Together with Jack Gifford and Fred Beck he co-founded Maxim Integrated Products in 1983 where he served as vice president of R&D and Applications until his retirement.
After earning a MSEE from Cambridge University in 1965, Scottish engineer Dave Fullagar emigrated to join Transitron and worked briefly for Tom Longo on the 16-bit RAM. Moving to the Fairchild Semiconductor R&D Laboratory in Palo Alto he made important contributions to the manufacturability of Bob Widlar’s design of the 709 operational amplifier. His 1968 design of an internally compensated competitor for National’s LM101 device (also designed by Widlar), designated the 741, became the world’s best selling op amp. Recruited by Intersil in 1969 as the company's first linear designer Fullagar went on to manage the European operation and later vice president of R&D. Together with Jack Gifford and Fred Beck he co-founded Maxim Integrated Products in 1983 where he served as vice president of R&D and Applications until his retirement.
Fuller, Calvin S.
During the early 1950s, Fuller pioneered the development of solid-state diffusion as a physical chemist at Bell Labs. Using this process, workers can introduce extremely thin layers — in some cases, less than a micrometer deep — of dopant impurities into germanium, silicon and other semiconductors. It permits precision control of the thickness of these layers and their impurity concentrations. Fuller’s impurity-diffusion process allowed the manufacture of high-speed transistors in the late 1950s and silicon integrated circuits beginning in the 1960s. To this day it remains a crucial processing technique used throughout the semiconductor industry.
During the early 1950s, Fuller pioneered the development of solid-state diffusion as a physical chemist at Bell Labs. Using this process, workers can introduce extremely thin layers — in some cases, less than a micrometer deep — of dopant impurities into germanium, silicon and other semiconductors. It permits precision control of the thickness of these layers and their impurity concentrations. Fuller’s impurity-diffusion process allowed the manufacture of high-speed transistors in the late 1950s and silicon integrated circuits beginning in the 1960s. To this day it remains a crucial processing technique used throughout the semiconductor industry.
Geller, Steve
Between 1968 and 1970 logic design engineer Steve Geller worked together with Ray Holt on the MP944 microprocessor chip set for the Central Air Data Computer (CADC) at Garrett AiResearch Corp, Torrance, California. Designed under contract from Grumman Aircraft, the prime contractor for the US Navy, the 20-bit, pipelined, parallel multi-microprocessor CADC controlled the moving surfaces and displayed pilot information in the US Navy F14A "TomCat" fighter jet.
Between 1968 and 1970 logic design engineer Steve Geller worked together with Ray Holt on the MP944 microprocessor chip set for the Central Air Data Computer (CADC) at Garrett AiResearch Corp, Torrance, California. Designed under contract from Grumman Aircraft, the prime contractor for the US Navy, the 20-bit, pipelined, parallel multi-microprocessor CADC controlled the moving surfaces and displayed pilot information in the US Navy F14A "TomCat" fighter jet.
Golay, M.J.E.
Marcel J. E. Golay worked at the U. S. Army Signal Corps, Fort Monmouth, NJ where together with Paul H. Keck in 1954-54 he developed floating zone techniques for high-purity refining of silicon. Earlier he was a member of the "V-2 Upper Atmosphere Research Panel" created in 1946 to work with captured V-2 rockets in sounding rocket research.
Marcel J. E. Golay worked at the U. S. Army Signal Corps, Fort Monmouth, NJ where together with Paul H. Keck in 1954-54 he developed floating zone techniques for high-purity refining of silicon. Earlier he was a member of the "V-2 Upper Atmosphere Research Panel" created in 1946 to work with captured V-2 rockets in sounding rocket research.
Grimsdale, Richard (1929 – 2005)
Born in Australia of British parents, Richard Grimsdale earned BSc and PhD degrees in Electrical Engineering from Manchester University, England. He learned computer programming on the EDSAC machine at Cambridge University and retuned to Manchester where with Douglas Webb in 1953 he developed the first transistorized computer. He collaborated with engineers at Metropolitan Vickers to build the commercial MV950 computer and in the 1970s joined a successor company Associated Electrical Industries to work on automation systems. From 1967 until his retirement Mr. Grimsdale served as an electrical engineering professor at Sussex University.
Born in Australia of British parents, Richard Grimsdale earned BSc and PhD degrees in Electrical Engineering from Manchester University, England. He learned computer programming on the EDSAC machine at Cambridge University and retuned to Manchester where with Douglas Webb in 1953 he developed the first transistorized computer. He collaborated with engineers at Metropolitan Vickers to build the commercial MV950 computer and in the 1970s joined a successor company Associated Electrical Industries to work on automation systems. From 1967 until his retirement Mr. Grimsdale served as an electrical engineering professor at Sussex University.
Grinich, Victor (November 24, 1924 - November 5, 2000)
Born in Aberdeen, Washington to Croatian immigrants parents Victor Grgurinović formally changed his name to Grinich to simplify roll call during his service in the U.S. Navy in World War II. He received a Bachelor's degree from the University of Washington in 1950 and a PhD in Electrical Engineering from Stanford University in 1953 after which he pursued research at Stanford Research Institute (SRI). Hired by William Shockley in 1956, Grinich was a member of the group of eight technologists who left Shockley Semiconductor to found Fairchild Semiconductor in 1957. At Fairchild he set up the test lab and other electronic systems where he was responsible for device characterization and applications. His department grew into the important Fairchild Instrumentation business. Mr. Grinich left Fairchild in 1968 to found Escort Memory Systems and later taught at Stanford and the University of California at Berkeley.
Born in Aberdeen, Washington to Croatian immigrants parents Victor Grgurinović formally changed his name to Grinich to simplify roll call during his service in the U.S. Navy in World War II. He received a Bachelor's degree from the University of Washington in 1950 and a PhD in Electrical Engineering from Stanford University in 1953 after which he pursued research at Stanford Research Institute (SRI). Hired by William Shockley in 1956, Grinich was a member of the group of eight technologists who left Shockley Semiconductor to found Fairchild Semiconductor in 1957. At Fairchild he set up the test lab and other electronic systems where he was responsible for device characterization and applications. His department grew into the important Fairchild Instrumentation business. Mr. Grinich left Fairchild in 1968 to found Escort Memory Systems and later taught at Stanford and the University of California at Berkeley.
Grove, Andrew
András István Gróf was born in Budapest, Hungary in 1936. He escaped during the Hungarian Revolution and arrived in the United States in 1957 where he earned a BS degree from the City College of New York and PhD in Chemical Engineering from the University of California, Berkeley in 1963. As Andrew Stephen Grove, he joined the Fairchild Semiconductor R&D Laboratory in 1963, where together with Bruce Deal and Ed Snow he helped to resolve many of the fundamental technological issues associated with stable MOS devices. In 1968 he joined Intel Corporation as Director of Engineering, rising to president in 1979, CEO in 1987, and chairman of the board in 1998. Under Grove's leadership, Intel grew into the largest and most recognized semiconductor company in the world. He has written more than 40 technical papers and several books, holds several patents in semiconductor devices and technology, and has taught at the University of California, Berkeley and the Stanford University Graduate School of Business.
András István Gróf was born in Budapest, Hungary in 1936. He escaped during the Hungarian Revolution and arrived in the United States in 1957 where he earned a BS degree from the City College of New York and PhD in Chemical Engineering from the University of California, Berkeley in 1963. As Andrew Stephen Grove, he joined the Fairchild Semiconductor R&D Laboratory in 1963, where together with Bruce Deal and Ed Snow he helped to resolve many of the fundamental technological issues associated with stable MOS devices. In 1968 he joined Intel Corporation as Director of Engineering, rising to president in 1979, CEO in 1987, and chairman of the board in 1998. Under Grove's leadership, Intel grew into the largest and most recognized semiconductor company in the world. He has written more than 40 technical papers and several books, holds several patents in semiconductor devices and technology, and has taught at the University of California, Berkeley and the Stanford University Graduate School of Business.
Haas, Isy
Isy Haas was born and raised in Istanbul, Turkey, in 1934. He graduated from American-run Robert College, now Boğaziçi University Turkey's leading public university. He attended Princeton University in US and where he received an MS in Electrical Engineering and Solid State Physics in 1957. Haas joined Remington Rand Univac in Philadelphia as a circuit engineer on the Univac computer family and moved to the west coast to work on device evaluation for Vic Grinich at Fairchild Semiconductor in 1958. After contributing to the development of the first planar integrated circuit family in 1961 he joined Jay Last at Amelco, a division of Teledyne. Hass left Teledyne in 1968 and started his own IC design company providing IC design services to major semiconductor companies until 1995 except for an 18 month period of employment at General Instrument in Chandler, AZ in 1978. He now lives in Tempe, AZ.
Isy Haas was born and raised in Istanbul, Turkey, in 1934. He graduated from American-run Robert College, now Boğaziçi University Turkey's leading public university. He attended Princeton University in US and where he received an MS in Electrical Engineering and Solid State Physics in 1957. Haas joined Remington Rand Univac in Philadelphia as a circuit engineer on the Univac computer family and moved to the west coast to work on device evaluation for Vic Grinich at Fairchild Semiconductor in 1958. After contributing to the development of the first planar integrated circuit family in 1961 he joined Jay Last at Amelco, a division of Teledyne. Hass left Teledyne in 1968 and started his own IC design company providing IC design services to major semiconductor companies until 1995 except for an 18 month period of employment at General Instrument in Chandler, AZ in 1978. He now lives in Tempe, AZ.
Hall, John
John H. Hall studied electronics in the Navy and after graduating from the University of Cincinnati in 1961 with degrees in math and science worked for Rockwell on the Minuteman program. At Honeywell he designed custom ICs for the YF-11 Blackbird Reconnaissance aircraft on-board computer. From 1962-67 Hall served as Director of IC Development at Union Carbide under Jean Hoerni and in 1968 he followed Hoerni to Intersil where he headed R & D. Funded by Seiko, Hall founded Micro Power Systems in 1971 to focus on ultra-low-power technologies, including CMOS for electronic watches. Since 1986 Hall has been Chairman and Chief Executive Officer of Linear Integrated Systems, Inc. specializing in bipolar linear and high-speed CMOS digital circuits.
John H. Hall studied electronics in the Navy and after graduating from the University of Cincinnati in 1961 with degrees in math and science worked for Rockwell on the Minuteman program. At Honeywell he designed custom ICs for the YF-11 Blackbird Reconnaissance aircraft on-board computer. From 1962-67 Hall served as Director of IC Development at Union Carbide under Jean Hoerni and in 1968 he followed Hoerni to Intersil where he headed R & D. Funded by Seiko, Hall founded Micro Power Systems in 1971 to focus on ultra-low-power technologies, including CMOS for electronic watches. Since 1986 Hall has been Chairman and Chief Executive Officer of Linear Integrated Systems, Inc. specializing in bipolar linear and high-speed CMOS digital circuits.
Hammer, William J. (February 26, 1858 - March 24, 1934)
William Joseph Hammer was born at Cressona, Schuylkill County, Pennsylvania and attended private and public schools in Newark, New Jersey. He started as a laboratory assistant to Thomas Edison at Menlo Park, New Jersey in 1870 where he worked on many projects, including the telephone, phonograph, electric railway, and the incandescent electric lamp. In 1880 he was appointed Chief Engineer of the Edison Lamp Works and was described by Edison as "my most valuable assistant at Menlo Park." While testing vacuum light bulbs Hammer noted a blue glow around the positive pole that was originally called "Hammer's Phantom Shadow." This discovery, renamed the "Edison Effect," became the basis of electron tube theory. He is also known for his later work on electroluminescence and selenium cells and as the owner of one of the first airplanes sold in the United States to an individual.
William Joseph Hammer was born at Cressona, Schuylkill County, Pennsylvania and attended private and public schools in Newark, New Jersey. He started as a laboratory assistant to Thomas Edison at Menlo Park, New Jersey in 1870 where he worked on many projects, including the telephone, phonograph, electric railway, and the incandescent electric lamp. In 1880 he was appointed Chief Engineer of the Edison Lamp Works and was described by Edison as "my most valuable assistant at Menlo Park." While testing vacuum light bulbs Hammer noted a blue glow around the positive pole that was originally called "Hammer's Phantom Shadow." This discovery, renamed the "Edison Effect," became the basis of electron tube theory. He is also known for his later work on electroluminescence and selenium cells and as the owner of one of the first airplanes sold in the United States to an individual.
Harris, James R.
Engineer James R. Harris worked with J. H. Felker on the design and construction of Bell Laboratories’ Phase I TRansistorized DIgital Computer (TRADIC) in Whippany, New Jersey in 1954. He made important contributions towards developing reliability information that convinced the armed forces that this new technology could meet their demanding applications. Harris describes this and other related experiences in a memoir published as “The Earliest Solid-State Digital Computers” in the IEEE Annals of the History of Computing Volume 21, Issue 4 (Oct-Dec, 1999) pp. 49-54. He retired from Bell Labs in 1983.
Engineer James R. Harris worked with J. H. Felker on the design and construction of Bell Laboratories’ Phase I TRansistorized DIgital Computer (TRADIC) in Whippany, New Jersey in 1954. He made important contributions towards developing reliability information that convinced the armed forces that this new technology could meet their demanding applications. Harris describes this and other related experiences in a memoir published as “The Earliest Solid-State Digital Computers” in the IEEE Annals of the History of Computing Volume 21, Issue 4 (Oct-Dec, 1999) pp. 49-54. He retired from Bell Labs in 1983.
Hoerni, Jean (September 26, 1924 — January 12, 1997)
Born and raised in Switzerland, Hoerni earned two doctorates in physics, at the Universities of Geneva and Cambridge, before coming to the United States and working as a postdoc at Caltech. He joined Shockley Semiconductor Laboratory in 1956 and left in September 1957 to found Fairchild Semiconductor Corporation with seven other dissidents. At Fairchild Hoerni conceived the planar silicon transistor on 1 December 1957 and successfully developed it in early 1959. Because its diffused p-n junctions were safely protected from contamination by the silicon-dioxide surface layer, it proved much more stable than mesa transistors and soon replaced them in semiconductor circles. His planar processing technique also led to the invention and development of the silicon integrated circuit at Fairchild under Robert Noyce and Jay Last in 1959–61. Hoerni left Fairchild with Last in early 1961 to help found the Amelco divison of Teledyne, Inc., expressly to manufacture integrated circuits. He left Teledyne in 1963 for Union Carbide, heading a research unit. In 1967 he established Intersil (short for International Silicon) with mainly European investors, producing MOS transistors and integrated circuits for calculators and watches. He founded several other companies, including Telmos to make high-voltage MOS devices.
Born and raised in Switzerland, Hoerni earned two doctorates in physics, at the Universities of Geneva and Cambridge, before coming to the United States and working as a postdoc at Caltech. He joined Shockley Semiconductor Laboratory in 1956 and left in September 1957 to found Fairchild Semiconductor Corporation with seven other dissidents. At Fairchild Hoerni conceived the planar silicon transistor on 1 December 1957 and successfully developed it in early 1959. Because its diffused p-n junctions were safely protected from contamination by the silicon-dioxide surface layer, it proved much more stable than mesa transistors and soon replaced them in semiconductor circles. His planar processing technique also led to the invention and development of the silicon integrated circuit at Fairchild under Robert Noyce and Jay Last in 1959–61. Hoerni left Fairchild with Last in early 1961 to help found the Amelco divison of Teledyne, Inc., expressly to manufacture integrated circuits. He left Teledyne in 1963 for Union Carbide, heading a research unit. In 1967 he established Intersil (short for International Silicon) with mainly European investors, producing MOS transistors and integrated circuits for calculators and watches. He founded several other companies, including Telmos to make high-voltage MOS devices.
Kahng, Dawon
Born in Korea, Kahng earned his Ph. D. in electrical engineering from Ohio State University and joined Bell Labs in 1959, working under M. M. Atalla, who assigned him the task of fabricating a field-effect transistor using silicon. Together they built the first metal-oxide-semiconductor (MOS) transistor structure in 1960, announcing their achievement at the IRE Solid-State Device Research Conference that year. In 1961, Kahng authored a Bell Labs technical memorandum about this device and was later awarded a patent on it. Since then, the MOS transistor has become the principal active component of most integrated circuits; millions of them can be found on every silicon microchip made today. Kahng remained at Bell Labs through the 1960s and made important contributions to the invention of flash memory.
Born in Korea, Kahng earned his Ph. D. in electrical engineering from Ohio State University and joined Bell Labs in 1959, working under M. M. Atalla, who assigned him the task of fabricating a field-effect transistor using silicon. Together they built the first metal-oxide-semiconductor (MOS) transistor structure in 1960, announcing their achievement at the IRE Solid-State Device Research Conference that year. In 1961, Kahng authored a Bell Labs technical memorandum about this device and was later awarded a patent on it. Since then, the MOS transistor has become the principal active component of most integrated circuits; millions of them can be found on every silicon microchip made today. Kahng remained at Bell Labs through the 1960s and made important contributions to the invention of flash memory.
Kattner, Lionel
Lionel Kattner graduated from Southwestern University in Texas with a degree in chemistry, physics and math. On graduation he went to work at the Hanford, Washington plant on the production of plutonium for nuclear weapons and later served as a nuclear officer in the US Navy. In 1958 he joined Texas Instruments in Dallas and worked as a product engineer on a germanium mesa transistor product line. In 1960 Kattner was recruited into Jay Last’s microelectronics group at Fairchild Semiconductor where he contributed to the development of the first planar integrated circuit. With three other Fairchild employees, in 1961 he founded Signetics Corporation.
Lionel Kattner graduated from Southwestern University in Texas with a degree in chemistry, physics and math. On graduation he went to work at the Hanford, Washington plant on the production of plutonium for nuclear weapons and later served as a nuclear officer in the US Navy. In 1958 he joined Texas Instruments in Dallas and worked as a product engineer on a germanium mesa transistor product line. In 1960 Kattner was recruited into Jay Last’s microelectronics group at Fairchild Semiconductor where he contributed to the development of the first planar integrated circuit. With three other Fairchild employees, in 1961 he founded Signetics Corporation.
Kelly, Mervin J. (14 February 1894 — 18 March 1971)
Born in Missouri, Kelly received degrees from the Missouri School of Mines and the University of Kentucky before earning his Ph.D. in physics from the University of Chicago, where he worked with Robert Millikan. Shortly thereafter, he joined the Western Electric Company and began working in Bell Telephone Laboratories when it was organized in 1925. He eventually rose through the ranks to lead Bell Labs in its most productive, successful years. Kelly was named head of vacuum tube development in 1928, and in 1936 became director of research, hiring William Shockley that year and suggesting he work on solid-state devices. During the War he headed Bell Labs and Western Electric efforts on radar research and development. After the War he stepped up as Executive Vice President, encouraging Shockley to organize a solid-state physics department. Out of this department emerged the point-contact and junction transistors, which utterly transformed the electronics industry. Kelly became President of Bell Labs in 1951, serving in that capacity until the end of 1958. As the administrator of a major high-technology enterprise, he is best known for his enlightened management philosophy, by which top scientists and engineers were encouraged to pursue basic research, as long as it had potential application to the production of useful goods and services.
Born in Missouri, Kelly received degrees from the Missouri School of Mines and the University of Kentucky before earning his Ph.D. in physics from the University of Chicago, where he worked with Robert Millikan. Shortly thereafter, he joined the Western Electric Company and began working in Bell Telephone Laboratories when it was organized in 1925. He eventually rose through the ranks to lead Bell Labs in its most productive, successful years. Kelly was named head of vacuum tube development in 1928, and in 1936 became director of research, hiring William Shockley that year and suggesting he work on solid-state devices. During the War he headed Bell Labs and Western Electric efforts on radar research and development. After the War he stepped up as Executive Vice President, encouraging Shockley to organize a solid-state physics department. Out of this department emerged the point-contact and junction transistors, which utterly transformed the electronics industry. Kelly became President of Bell Labs in 1951, serving in that capacity until the end of 1958. As the administrator of a major high-technology enterprise, he is best known for his enlightened management philosophy, by which top scientists and engineers were encouraged to pursue basic research, as long as it had potential application to the production of useful goods and services.
Kilby, Jack St. Clair (November 8, 1923 – June 20, 2005)
Born in Missouri, Jack Kilby was raised in Great Bend, Kansas. In 1950 he earned a master's degree in Electrical Engineering from the University of Wisconsin, while simultaneously working at Centralab in Milwaukee. At Texas Instruments he demonstrated the first concept integrated circuit in 1958 and later co-invented the hand-held calculator and a thermal printer used in portable data terminals. He was awarded the 2000 Nobel Prize in Physics prize for his contribution to the invention of the integrated circuit.
Born in Missouri, Jack Kilby was raised in Great Bend, Kansas. In 1950 he earned a master's degree in Electrical Engineering from the University of Wisconsin, while simultaneously working at Centralab in Milwaukee. At Texas Instruments he demonstrated the first concept integrated circuit in 1958 and later co-invented the hand-held calculator and a thermal printer used in portable data terminals. He was awarded the 2000 Nobel Prize in Physics prize for his contribution to the invention of the integrated circuit.
Last, Jay T.
Born in Pennsylvania, Last earned a bachelor’s degree in optics from the University of Rochester and his Ph.D. in physics from MIT, after which he joined the Shockley Semiconductor Laboratory in 1956. Together with seven colleagues, he departed in September 1957 to found Fairchild Semiconductor Corporation in Palo Alto, CA — the first company to manufacture silicon mesa transistors and planar integrated circuits. With Robert Noyce, Last built the first step-and-repeat camera in 1958 and used it to define transistor features photographically, in a process known as photolithography. From 1959 to 1961, he headed a team that developed the first commercial integrated circuits based on the planar processing technology developed by Jean Hoerni. In February 1961 Last and Hoerni left Fairchild to found the Amelco division of Teledyne, Inc., with the goal of manufacturing integrated circuits. He remained with Teledyne until his retirement. Last also founded and managed the Hillcrest Press.
Born in Pennsylvania, Last earned a bachelor’s degree in optics from the University of Rochester and his Ph.D. in physics from MIT, after which he joined the Shockley Semiconductor Laboratory in 1956. Together with seven colleagues, he departed in September 1957 to found Fairchild Semiconductor Corporation in Palo Alto, CA — the first company to manufacture silicon mesa transistors and planar integrated circuits. With Robert Noyce, Last built the first step-and-repeat camera in 1958 and used it to define transistor features photographically, in a process known as photolithography. From 1959 to 1961, he headed a team that developed the first commercial integrated circuits based on the planar processing technology developed by Jean Hoerni. In February 1961 Last and Hoerni left Fairchild to found the Amelco division of Teledyne, Inc., with the goal of manufacturing integrated circuits. He remained with Teledyne until his retirement. Last also founded and managed the Hillcrest Press.
Lee, Charles A.
An engineer at Bell Labs during the 1950s, Lee fabricated the first diffused-base transistor in late 1954, using the semiconductor material germanium. The emitter in this transistor was alloyed into an impurity layer initially diffused into the surface. Working at over 100 MHz, it was the highest-frequency transistor then operating.
An engineer at Bell Labs during the 1950s, Lee fabricated the first diffused-base transistor in late 1954, using the semiconductor material germanium. The emitter in this transistor was alloyed into an impurity layer initially diffused into the surface. Working at over 100 MHz, it was the highest-frequency transistor then operating.
Little, John B.
A mechanical engineer who joined the Bell Labs device development department in 1948, Little worked with chemist Gordon Teal to build the original crystal-growing apparatus used by Teal and his coworkers to pull large single crystals of germanium from the molten element. Such crystals were crucial to the successful development of the transistor during the early 1950s.
A mechanical engineer who joined the Bell Labs device development department in 1948, Little worked with chemist Gordon Teal to build the original crystal-growing apparatus used by Teal and his coworkers to pull large single crystals of germanium from the molten element. Such crystals were crucial to the successful development of the transistor during the early 1950s.
Mataré, Herbert
Born in Germany of Belgian parents, Mataré earned a doctorate in physics in 1942 from the Technical University of Berlin. During World War II, he worked in the German radar program, developing crystal rectifiers using silicon and germanium. After the War he and physicist Heinrich Welker worked at a Westinghouse subsidiary in the Paris suburbs to manufacture germanium diodes for military and telecommunications applications. In mid-1948, after studying curious effects he had observed earlier, he and Welker fabricated a three-terminal point-contact amplifier based on germanium. Closely analogous to Bardeen and Brattain’s point-contact transistor but invented independently, it was dubbed the “transistron” and announced in May 1949. The company soon began manufacturing and selling these devices in quantity. Mataré left Paris and returned to Germany in 1952 to found a new company called Intermetall in Düsseldorf. After this company was sold to the Clevite Corporation, he moved to the United States and worked in the U.S. semiconductor industry.
Born in Germany of Belgian parents, Mataré earned a doctorate in physics in 1942 from the Technical University of Berlin. During World War II, he worked in the German radar program, developing crystal rectifiers using silicon and germanium. After the War he and physicist Heinrich Welker worked at a Westinghouse subsidiary in the Paris suburbs to manufacture germanium diodes for military and telecommunications applications. In mid-1948, after studying curious effects he had observed earlier, he and Welker fabricated a three-terminal point-contact amplifier based on germanium. Closely analogous to Bardeen and Brattain’s point-contact transistor but invented independently, it was dubbed the “transistron” and announced in May 1949. The company soon began manufacturing and selling these devices in quantity. Mataré left Paris and returned to Germany in 1952 to found a new company called Intermetall in Düsseldorf. After this company was sold to the Clevite Corporation, he moved to the United States and worked in the U.S. semiconductor industry.
Moore, Gordon E. (January 3, 1929)
Gordon Moore was born and spent his childhood near San Francisco, California. He earned a PhD in Chemistry and Physics from the California Institute of Technology. After joining Shockley Semiconductor Laboratory in 1956, he was one of the eight employees who left to found Fairchild Semiconductor Corporation in 1957. As head of R&D, in 1965 he published an observation on the increase of integrated circuit complexity with time, now known as "Moore's Law," that emerged as one of the driving principles of the semiconductor industry. In 1968 Moore co-founded Intel Corporation with Robert Noyce, became president and CEO in 1975 and held that post until elected chairman and CEO in 1979. He remained CEO until 1987 and was named chairman emeritus in 1997.
Gordon Moore was born and spent his childhood near San Francisco, California. He earned a PhD in Chemistry and Physics from the California Institute of Technology. After joining Shockley Semiconductor Laboratory in 1956, he was one of the eight employees who left to found Fairchild Semiconductor Corporation in 1957. As head of R&D, in 1965 he published an observation on the increase of integrated circuit complexity with time, now known as "Moore's Law," that emerged as one of the driving principles of the semiconductor industry. In 1968 Moore co-founded Intel Corporation with Robert Noyce, became president and CEO in 1975 and held that post until elected chairman and CEO in 1979. He remained CEO until 1987 and was named chairman emeritus in 1997.
Morton, Jack A. (September 4, 1913 — December 11, 1971)
Born in St. Louis, Missouri, Morton earned his bachelor’s and master’s degrees in electrical engineering from Wayne University and the University of Michigan before joining Bell Telephone Laboratories in 1936. He worked there on the development of vacuum tubes and radar systems during and after World War II. In 1948 Mervin Kelly named him to organize and head a new team developing the point-contact (and later the junction) transistor into a robust, reliable, manufactureable device. Under Morton’s astute, forceful leadership the Labs developed many of the underlying technologies — such as zone refining, crystal growing, and silicon diffusion — that made reliable, high-performance transistors possible. In March 1955, recognizing its superiority over germanium, he decided to pursue silicon as the semiconductor material of choice in the Bell Telephone System. It proved the correct decision. In 1958 Morton became Vice President of device development at Bell Labs. During his tenure, the Labs pioneered such new technologies as thin-film circuitry, bubble memories and charge-coupled devices (CCD’s). But Morton was also responsible for its initial lack of interest in integrated circuits and MOS transistors. He died in December 1971 after a barroom struggle with two men.
Born in St. Louis, Missouri, Morton earned his bachelor’s and master’s degrees in electrical engineering from Wayne University and the University of Michigan before joining Bell Telephone Laboratories in 1936. He worked there on the development of vacuum tubes and radar systems during and after World War II. In 1948 Mervin Kelly named him to organize and head a new team developing the point-contact (and later the junction) transistor into a robust, reliable, manufactureable device. Under Morton’s astute, forceful leadership the Labs developed many of the underlying technologies — such as zone refining, crystal growing, and silicon diffusion — that made reliable, high-performance transistors possible. In March 1955, recognizing its superiority over germanium, he decided to pursue silicon as the semiconductor material of choice in the Bell Telephone System. It proved the correct decision. In 1958 Morton became Vice President of device development at Bell Labs. During his tenure, the Labs pioneered such new technologies as thin-film circuitry, bubble memories and charge-coupled devices (CCD’s). But Morton was also responsible for its initial lack of interest in integrated circuits and MOS transistors. He died in December 1971 after a barroom struggle with two men.
Norman, Robert
Robert (Bob) Norman graduated from Oklahoma A&M University in 1954 with a BS in electronic engineering and math. In his undergraduate year he worked for the Sperry Gyroscope advanced weapon systems department on the application of transistors to computer design where he first conceived the idea of using transistors for memory storage. He joined the company full time in 1957. In 1959 Vic Grinich hired Norman to head up the device evaluation section at Fairchild where he designed the DCTL logic circuits for first monolithic IC family. He co-founded General Microelectronics in 1963 and Nortec Electronics in 1968.
Robert (Bob) Norman graduated from Oklahoma A&M University in 1954 with a BS in electronic engineering and math. In his undergraduate year he worked for the Sperry Gyroscope advanced weapon systems department on the application of transistors to computer design where he first conceived the idea of using transistors for memory storage. He joined the company full time in 1957. In 1959 Vic Grinich hired Norman to head up the device evaluation section at Fairchild where he designed the DCTL logic circuits for first monolithic IC family. He co-founded General Microelectronics in 1963 and Nortec Electronics in 1968.
Noyce, Robert N. (December 12, 1927 – June 3, 1990)
Noyce was born in Burlington, Iowa. He graduated with a Ph.D. in physics from Massachusetts Institute of Technology in 1953. William Shockley hired him from Philco Corporation to work at Shockley Semiconductor Laboratories in 1956. With eight other employees he left to found Fairchild Semiconductor Corporation in 1957. At Fairchild he presided over a decade of innovation in semiconductor technology including invention of the monolithic integrated circuit. In 1968 Noyce co-founded Intel Corporation with Gordon Moore.
Noyce was born in Burlington, Iowa. He graduated with a Ph.D. in physics from Massachusetts Institute of Technology in 1953. William Shockley hired him from Philco Corporation to work at Shockley Semiconductor Laboratories in 1956. With eight other employees he left to found Fairchild Semiconductor Corporation in 1957. At Fairchild he presided over a decade of innovation in semiconductor technology including invention of the monolithic integrated circuit. In 1968 Noyce co-founded Intel Corporation with Gordon Moore.
Ohl, Russell S. (1989 —1987)
An electrochemist at Bell Telephone Laboratories, Ohl is generally credited with the discovery of the p-n junction during experiments he was performing on silicon in February 1940. He earned his bachelor’s degree from Pennsylvania State University and joined Bell Labs in 1927, working at its communications laboratory in Holmdel, New Jersey. During the late 1930s, while developing detectors for short-wave and microwave communications, he began to pursue crystal rectifiers fabricated with silicon as the best available alternative. On 23 February 1940, he discovered that light from an incandescent bulb could induce a current to flow through a particular silicon sample that had a small seam running across it. This photovoltaic effect was soon attributed to the voltage stimulated by light hitting this seam, which was an interface between p-type and n-type regions in the silicon.
An electrochemist at Bell Telephone Laboratories, Ohl is generally credited with the discovery of the p-n junction during experiments he was performing on silicon in February 1940. He earned his bachelor’s degree from Pennsylvania State University and joined Bell Labs in 1927, working at its communications laboratory in Holmdel, New Jersey. During the late 1930s, while developing detectors for short-wave and microwave communications, he began to pursue crystal rectifiers fabricated with silicon as the best available alternative. On 23 February 1940, he discovered that light from an incandescent bulb could induce a current to flow through a particular silicon sample that had a small seam running across it. This photovoltaic effect was soon attributed to the voltage stimulated by light hitting this seam, which was an interface between p-type and n-type regions in the silicon.
Pearson, Gerald L.
Born and raised in Oregon, Pearson earned a doctorate in physics at Stanford University and joined Bell Telephone Laboratories in 1929. He joined Shockley’s solid-state physics group at Bell Telephone Laboratories after World War II, sharing a laboratory with Walter Brattain and performing early experiments on field-effect transistors. Following that he researched the semiconductor properties of silicon with John Bardeen. With Daryl Chapin and Calvin Fuller, he developed the Solar Battery, a large-area photovoltaic cell made by diffusing boron into silicon. In later years he served as a professor of applied physics at Stanford University.
Born and raised in Oregon, Pearson earned a doctorate in physics at Stanford University and joined Bell Telephone Laboratories in 1929. He joined Shockley’s solid-state physics group at Bell Telephone Laboratories after World War II, sharing a laboratory with Walter Brattain and performing early experiments on field-effect transistors. Following that he researched the semiconductor properties of silicon with John Bardeen. With Daryl Chapin and Calvin Fuller, he developed the Solar Battery, a large-area photovoltaic cell made by diffusing boron into silicon. In later years he served as a professor of applied physics at Stanford University.
Pfann, William G.
Beginning as technician in the chemistry department at Bell Telephone Laboratories in 1935, Pfann made a series of important contributions to the development of early point-contact and junction transistors. Most noteworthy among them was the zone-refining technique by which impurities in germanium could be reduced to less than one part per billion. While working at Bell Labs, he earned a bachelor’s degree in chemical engineering from Cooper Union.
Beginning as technician in the chemistry department at Bell Telephone Laboratories in 1935, Pfann made a series of important contributions to the development of early point-contact and junction transistors. Most noteworthy among them was the zone-refining technique by which impurities in germanium could be reduced to less than one part per billion. While working at Bell Labs, he earned a bachelor’s degree in chemical engineering from Cooper Union.
Ross, Ian M.
Born and raised in England, Ross earned his bachelor’s, masters, and Ph.D. degrees in electrical engineering from Cambridge University. He joined the Bell Telephone Laboratories in 1952 and worked on the development of semiconductor devices for the next decade. He was intimately involved in research efforts that led to epitaxial growth of silicon crystals in the early 1960s. Following that he rose through Bell Labs management to become its President from 1979 to 1991.
Born and raised in England, Ross earned his bachelor’s, masters, and Ph.D. degrees in electrical engineering from Cambridge University. He joined the Bell Telephone Laboratories in 1952 and worked on the development of semiconductor devices for the next decade. He was intimately involved in research efforts that led to epitaxial growth of silicon crystals in the early 1960s. Following that he rose through Bell Labs management to become its President from 1979 to 1991.
Sah, Chih-Tang
Educated as a physicist in China, Sah joined Shockley Semiconductor Laboratory in 1956, co-authoring an important 1957 paper on electron-hole recombination with Shockley and Robert Noyce. He joined Fairchild Semiconductor Corporation in 1959, eventually heading a team that developed processes for manufacturing integrated circuits. In the mid-1960s, he organized a group that included Bruce Deal, Andy Grove and Ed Snow, which resolved the stability problems of the silicon-dioxide layer and made it possible to mass-produce MOS transistors and circuits. In the late 1960s he became professor of physics and electrical engineering at the University of Illinois.
Educated as a physicist in China, Sah joined Shockley Semiconductor Laboratory in 1956, co-authoring an important 1957 paper on electron-hole recombination with Shockley and Robert Noyce. He joined Fairchild Semiconductor Corporation in 1959, eventually heading a team that developed processes for manufacturing integrated circuits. In the mid-1960s, he organized a group that included Bruce Deal, Andy Grove and Ed Snow, which resolved the stability problems of the silicon-dioxide layer and made it possible to mass-produce MOS transistors and circuits. In the late 1960s he became professor of physics and electrical engineering at the University of Illinois.
Scaff, Jack H.
Born in Tennessee, Scaff earned his bachelor’s degree in chemistry at the University of Michigan and joined the Bell Telephone Laboratories in 1929, concentrating on materials research and metallurgy. With Russell Ohl and Henry Theurer during World War II, he developed the understanding of how to “dope” pure silicon and germanium with impurities to obtain n-type and p-type semiconductor materials. Working with William Pfann in the early 1950s, he also developed the zone-refining process for purifying germanium.
Born in Tennessee, Scaff earned his bachelor’s degree in chemistry at the University of Michigan and joined the Bell Telephone Laboratories in 1929, concentrating on materials research and metallurgy. With Russell Ohl and Henry Theurer during World War II, he developed the understanding of how to “dope” pure silicon and germanium with impurities to obtain n-type and p-type semiconductor materials. Working with William Pfann in the early 1950s, he also developed the zone-refining process for purifying germanium.
Seitz, Frederick
Seitz is one of a few theoretical physicists who pioneered the new discipline of solid-state physics in America during the 1930s and 1940s. Born in 1911 in San Francisco, he earned his bachelor’s degree in physics at Stanford and his Ph.D. at Princeton in 1935. In 1940 he published The Modern Theory of Solids, which became the leading textbook in the field. While teaching at the University of Pennsylvania during World War II, he worked as consultant to Dupont on its wartime efforts in purifying silicon — eventually obtaining purities of 99.999 percent. After the war he became professor of physics at the University of Illinois, where he hired John Bardeen away from Bell Labs. During the 1960s, Seitz stepped in as President of Rockefeller University and was also elected President of the National Academy of Science.
Seitz is one of a few theoretical physicists who pioneered the new discipline of solid-state physics in America during the 1930s and 1940s. Born in 1911 in San Francisco, he earned his bachelor’s degree in physics at Stanford and his Ph.D. at Princeton in 1935. In 1940 he published The Modern Theory of Solids, which became the leading textbook in the field. While teaching at the University of Pennsylvania during World War II, he worked as consultant to Dupont on its wartime efforts in purifying silicon — eventually obtaining purities of 99.999 percent. After the war he became professor of physics at the University of Illinois, where he hired John Bardeen away from Bell Labs. During the 1960s, Seitz stepped in as President of Rockefeller University and was also elected President of the National Academy of Science.
Shive, John N.
Shive was a physicist who worked on the early development of the transistor at Bell Telephone Laboratories in the late 1940s and early 1950s. He is best remembered for an experiment he did in February 1948 that first demonstrated William Shockley’s theoretical ideas about minority carrier injection in transistor operation.
Shive was a physicist who worked on the early development of the transistor at Bell Telephone Laboratories in the late 1940s and early 1950s. He is best remembered for an experiment he did in February 1948 that first demonstrated William Shockley’s theoretical ideas about minority carrier injection in transistor operation.
Shockley, William Bradford (February 13, 1910 – August 12, 1989)
Born in London, England to American parents, Shockley worked as a physicist at Bell Telephone Laboratories from 1936 until 1955, when he moved to California and established his own semiconductor company. In 1963 he became a professor of engineering and applied science at Stanford University, where he died in 1989. Raised in England and California, Shockley earned his bachelor’s degree at the California Institute of Technology in 1932 and his Ph.D. in theoretical physics from the Massachusetts Institute of Technology in 1936. At Bell Labs he worked on solid-state physics before turning to operations research during World War II. In 1945 he returned to Bell Labs and organized a new solid-state research group that included John Bardeen and Walter Brattain. Spurred by their invention of the point-contact transistor, he invented the junction transistor in January 1948; it proved to be more reliable and much easier to manufacture. He shared the 1956 Nobel Prize in physics for this invention with Bardeen and Brattain. That year also he started the Shockley Semiconductor Laboratory, attracting about a dozen top-notch scientists and engineers. Eight of them soon departed to found the Fairchild Semiconductor Corporation in nearby Palo Alto, where they developed the first commercial integrated circuits. After leaving for Stanford in 1963, he began to espouse controversial ideas on race and intelligence.
Born in London, England to American parents, Shockley worked as a physicist at Bell Telephone Laboratories from 1936 until 1955, when he moved to California and established his own semiconductor company. In 1963 he became a professor of engineering and applied science at Stanford University, where he died in 1989. Raised in England and California, Shockley earned his bachelor’s degree at the California Institute of Technology in 1932 and his Ph.D. in theoretical physics from the Massachusetts Institute of Technology in 1936. At Bell Labs he worked on solid-state physics before turning to operations research during World War II. In 1945 he returned to Bell Labs and organized a new solid-state research group that included John Bardeen and Walter Brattain. Spurred by their invention of the point-contact transistor, he invented the junction transistor in January 1948; it proved to be more reliable and much easier to manufacture. He shared the 1956 Nobel Prize in physics for this invention with Bardeen and Brattain. That year also he started the Shockley Semiconductor Laboratory, attracting about a dozen top-notch scientists and engineers. Eight of them soon departed to found the Fairchild Semiconductor Corporation in nearby Palo Alto, where they developed the first commercial integrated circuits. After leaving for Stanford in 1963, he began to espouse controversial ideas on race and intelligence.
Sparks, Morgan
Sparks grew up in Colorado and earned his Ph.D. in physical chemistry from the University of Illinois in 1943, joining Bell Telephone Laboratories soon thereafter. In 1948 he transferred into Shockley’s solid-state physics group and began working on junction-transistor research. With Gordon Teal, he developed techniques for making germanium grown-junction transistors during the process of growing single crystals of this material. Announced in July 1951, these were the first successful junction transistors. Sparks rose through the management ranks at Bell Labs during the 1950s and 1960s. In 1972 he became director of the Sandia National Laboratories in Albuquerque, New Mexico.
Sparks grew up in Colorado and earned his Ph.D. in physical chemistry from the University of Illinois in 1943, joining Bell Telephone Laboratories soon thereafter. In 1948 he transferred into Shockley’s solid-state physics group and began working on junction-transistor research. With Gordon Teal, he developed techniques for making germanium grown-junction transistors during the process of growing single crystals of this material. Announced in July 1951, these were the first successful junction transistors. Sparks rose through the management ranks at Bell Labs during the 1950s and 1960s. In 1972 he became director of the Sandia National Laboratories in Albuquerque, New Mexico.
Swanson, Robert
Robert H. Swanson, a founder of Linear Technology Corporation, has served as Chief Executive Officer, President, and Executive Chairman and has been a director of the Company since its incorporation in September 1981. Before co-founding Linear Technology, Mr. Swanson held various positions at National Semiconductor Corporation, including Vice President and General Manager of the Linear Integrated Circuit Operation and Managing Director in Europe. Prior to that he worked at Fairchild Semiconductor and Transitron. Mr. Swanson holds a BS degree in Industrial Engineering from Northeastern University.
Robert H. Swanson, a founder of Linear Technology Corporation, has served as Chief Executive Officer, President, and Executive Chairman and has been a director of the Company since its incorporation in September 1981. Before co-founding Linear Technology, Mr. Swanson held various positions at National Semiconductor Corporation, including Vice President and General Manager of the Linear Integrated Circuit Operation and Managing Director in Europe. Prior to that he worked at Fairchild Semiconductor and Transitron. Mr. Swanson holds a BS degree in Industrial Engineering from Northeastern University.
Tanenbaum, Morris
Tanenbaum is the physical chemist who fabricated some of the earliest silicon transistors at Bell Telephone Laboratories. He joined Bell Labs in 1952 after earning degrees in chemistry from Johns Hopkins and Princeton. In January 1954 he made the first silicon grown-junction transistor but did not pursue it further because the Labs considered diffusion a much better technology. In March 1955 he fabricated the first diffused-base silicon transistor with his technician D. E. Thomas, which heavily influenced Jack Morton’s subsequent decision to concentrate further development efforts on silicon. During the 1960s and 1970s, Tanenbaum rose to become Executive Vice President of Bell Labs.
Tanenbaum is the physical chemist who fabricated some of the earliest silicon transistors at Bell Telephone Laboratories. He joined Bell Labs in 1952 after earning degrees in chemistry from Johns Hopkins and Princeton. In January 1954 he made the first silicon grown-junction transistor but did not pursue it further because the Labs considered diffusion a much better technology. In March 1955 he fabricated the first diffused-base silicon transistor with his technician D. E. Thomas, which heavily influenced Jack Morton’s subsequent decision to concentrate further development efforts on silicon. During the 1960s and 1970s, Tanenbaum rose to become Executive Vice President of Bell Labs.
Teal, Gordon K. (January 10, 1907 — January 7, 2003)
Teal is the physical chemist who pioneered the growth of large single crystals of silicon and germanium, which have been crucial to manufacturing semiconductor devices since the early 1950s. Born in Dallas, he earned a bachelor’s degree from Baylor and his Ph.D. degree in chemistry from Brown University. He joined the Bell Labs chemical research department in 1930 and studied germanium crystal rectifiers during World War II. After the invention of the transistor, he worked with engineer John Little and technician Ernest Buehler to develop and perfect crystal-growing techniques for germanium and then silicon. He also did early research on epitaxial crystal growth. Teal left Bell Labs in December 1952 to join Texas Instruments as its first research director. Under his leadership, TI manufactured the first commercial silicon transistors in 1954.
Teal is the physical chemist who pioneered the growth of large single crystals of silicon and germanium, which have been crucial to manufacturing semiconductor devices since the early 1950s. Born in Dallas, he earned a bachelor’s degree from Baylor and his Ph.D. degree in chemistry from Brown University. He joined the Bell Labs chemical research department in 1930 and studied germanium crystal rectifiers during World War II. After the invention of the transistor, he worked with engineer John Little and technician Ernest Buehler to develop and perfect crystal-growing techniques for germanium and then silicon. He also did early research on epitaxial crystal growth. Teal left Bell Labs in December 1952 to join Texas Instruments as its first research director. Under his leadership, TI manufactured the first commercial silicon transistors in 1954.
Theurer, Henry C.
Theurer was a chemist at Bell Telephone Laboratories who contributed to many of its major achievements in semiconductor materials processing. During World War II he worked with metallurgist Jack Scaff to develop a fundamental understanding of how to add impurities to pure silicon and germanium to produce n-type and p-type semiconductors. In 1955 he developed float-zone refining of silicon, an adaptation of the zone-refining technique of William Pfann. And in 1960 he led a team of Bell Labs researchers who first demonstrated how to grow ultrathin epitaxial layers of silicon on a crystalline substrate.
Theurer was a chemist at Bell Telephone Laboratories who contributed to many of its major achievements in semiconductor materials processing. During World War II he worked with metallurgist Jack Scaff to develop a fundamental understanding of how to add impurities to pure silicon and germanium to produce n-type and p-type semiconductors. In 1955 he developed float-zone refining of silicon, an adaptation of the zone-refining technique of William Pfann. And in 1960 he led a team of Bell Labs researchers who first demonstrated how to grow ultrathin epitaxial layers of silicon on a crystalline substrate.
Thomas, D. E.
Thomas served as a technician at Bell Telephone Laboratories during the 1950s. He fabricated the first diffused-base silicon transistor with Morris Tanenbaum in 1954.
Thomas served as a technician at Bell Telephone Laboratories during the 1950s. He fabricated the first diffused-base silicon transistor with Morris Tanenbaum in 1954.
Welker, Heinrich (September 9, 1912 — December 25, 1981)
A German theoretical and applied physicist, Welker was one of the most important European contributors to semiconductor science and technology. He earned his Ph.D. in physics at the University of Munich in 1936 and worked on germanium processing in the German radar program during World War II. After the war he organized a small company with Herbert Mataré in a Paris suburb to manufacture germanium diodes for military and communications applications. In mid-1948 they invented a three-contact semiconductor amplifier based on germanium that was similar to Bardeen and Brattain’s point-contact transistor. The following year they announced the device, dubbed the “transistron,” and put it into limited production. Welker joined Siemens-Schuckert in 1951, leading its solid-state physics department. There he pioneered the science and technology of gallium arsenide and other similar compound semiconductors for microwave and optoelectronic applications. During the 1960s he eventually became director of all the company’s research operations.
A German theoretical and applied physicist, Welker was one of the most important European contributors to semiconductor science and technology. He earned his Ph.D. in physics at the University of Munich in 1936 and worked on germanium processing in the German radar program during World War II. After the war he organized a small company with Herbert Mataré in a Paris suburb to manufacture germanium diodes for military and communications applications. In mid-1948 they invented a three-contact semiconductor amplifier based on germanium that was similar to Bardeen and Brattain’s point-contact transistor. The following year they announced the device, dubbed the “transistron,” and put it into limited production. Welker joined Siemens-Schuckert in 1951, leading its solid-state physics department. There he pioneered the science and technology of gallium arsenide and other similar compound semiconductors for microwave and optoelectronic applications. During the 1960s he eventually became director of all the company’s research operations.