1833: First Semiconductor Effect is Recorded Michael Faraday describes the "extraordinary case" of his discovery of electrical conduction increasing with temperature in silver sulfide crystals. This is the opposite to that observed in copper and other metals.
1874: Semiconductor Point-Contact Rectifier Effect is Discovered In the first written description of a semiconductor diode, Ferdinand Braun notes that current flows freely in only one direction at the contact between a metal point and a galena crystal.
1926: Field Effect Semiconductor Device Concepts Patented Julius Lilienfeld files a patent describing a three-electrode amplifying device based on the semiconducting properties of copper sulfide. Attempts to build such a device continue through the 1930s.
1931: "The Theory Of Electronic Semi-Conductors" is Published Alan Wilson uses quantum mechanics to explain basic semiconductor properties. Seven years later Boris Davydov (USSR), Nevill Mott (UK), and Walter Schottky (Germany) independently explain rectification.
1940: Discovery of the p-n Junction Russell Ohl discovers the p-n junction and photovoltaic effects in silicon that lead to the development of junction transistors and solar cells.
1948: Conception of the Junction Transistor William Shockley conceives an improved transistor structure based on a theoretical understanding of the p-n junction effect.
1948: The European Transistor Invention Herbert Mataré & Heinrich Welker independently create a germanium point-contact transistor in France.
1951: Development of Zone Refining William Pfann and Henry Theurer develop zone refining techniques for production of ultra-pure semiconductor materials.
1952: Transistorized Consumer Products Appear Semiconductors appear in battery-powered hearing aids and pocket radios where consumers are willing to pay a premium for portability and low power consumption.
1953: Transistorized Computers Emerge A transistorized computer prototype demonstrates the small size and low-power advantages of semiconductors compared to vacuum tubes.
1954: Diffusion Process Developed for Transistors Following the production of solar cells using high-temperature diffusion methods, Charles Lee and Morris Tanenbaum apply the technique to fabricate high-speed transistors.
1955: Development of Oxide Masking Carl Frosch and Lincoln Derick grow a silicon dioxide film on wafers to protect their surface and allow controlled diffusion into the underlying silicon.
1956: Silicon Comes to Silicon Valley Shockley Semiconductor Laboratory develops Northern California's first prototype silicon devices while training young engineers and scientists for the future Silicon Valley.
1958: Tunnel Diode Promises a High-Speed Semiconductor Switch Leo Esaki’s novel device is an example of many celebrated semiconductor breakthroughs that do not sustain their early promise as they are overtaken by competing technologies.
1959: Invention of the "Planar" Manufacturing Process Jean Hoerni develops the planar process to solve reliability problems of the mesa transistor, thereby revolutionizing semiconductor manufacturing.
1961: Silicon Transistor Exceeds Germanium Speed Computer architect Seymour Cray funds development of the first silicon device to meet the performance demands of the world’s fastest machine.
1963: Complementary MOS Circuit Configuration is Invented Frank Wanlass invents the lowest power logic configuration but performance limitations impede early acceptance of today's dominant manufacturing technology.
1963: Standard Logic IC Families introduced Diode Transistor Logic (DTL) families create a high-volume market for digital ICs but speed, cost, and density advantages establish Transistor Transistor Logic (TTL) as the most popular standard logic configuration by the late 1960s.
1964: First Commercial MOS IC Introduced General Microelectronics uses a Metal-Oxide-Semiconductor (MOS) process to pack more transistors on a chip than bipolar ICs and builds the first calculator chip set using the technology.
1967: Turnkey Equipment Suppliers Change Industry Dynamics Third-party vendors develop specialized knowledge of semiconductor fabrication and emerge as vendors of process technology and turnkey manufacturing facilities.
1968: Silicon Gate Technology Developed for ICs Federico Faggin and Tom Klein improve the reliability, packing density, and speed of MOS ICs with a silicon-gate structure. Faggin designs the first commercial silicon-gate IC – the Fairchild 3708.
1971: Reusable Programmable ROM Introduces Iterative Design Flexibility Dov Froman’s ultra-violet light erasable ROM design offers an important design tool for the rapid development of microprocessor-based systems, called an erasable, programmable read-only-memory or EPROM.
1974: General-Purpose Microcontroller Family is Announced A single-chip calculator design emerges as the TMS 1000 micro-control unit or MCU, a concept that spawned families of general-purpose digital workhorses that power the tools and toys of the developed world.
1974: Digital Watch is First System-On-Chip Integrated Circuit The Microma liquid crystal display (LCD) digital watch is the first product to integrate a complete electronic system onto a single silicon chip, called a System-On-Chip or SOC.
1974: Scaling of IC Process Design Rules Quantified IBM researcher Robert Dennard’s paper on process scaling on MOS memories accelerates a global race to shrink physical dimensions and manufacture ever more complex integrated circuits.
1978: PAL User-Programmable Logic Devices Introduced John Birkner and H. T. Chua of Monolithic Memories develop easy-to-use programmable array logic (PAL) devices and tools for fast prototyping custom logic functions.